SNVU915 August 2024 LMG2100R026
The LMG2100R026 device is an 100V Gallium Nitride (GaN) half-bridge power module with an integrated driver. The device provides an integrated power stage using enhancement-mode GaN FETs. The LMG2100R026 device consists of two GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. The guide shows a circuit and the list of materials describing how to power the board up and how to set the board up for a certain regulation voltage. The EVM board is designed to accelerate the evaluation of the LMG2100R026. This board is not intended to be used as a standalone product, but is intended to evaluate the switching performance of LMG2100R026.
This evaluation module can be configured to either buck or boost mode by providing external gate signals. External heat sink is used to test this module up to 750W. External supply voltage (5.5V to 10V) is required to power the LMG2100R026 and dead time generation circuit.