SNVU915 August   2024 LMG2100R026

 

  1.   1
  2.   Description
  3.   Features
  4.   Applications
  5.   5
  6. 1Evaluation Module Overview
    1. 1.1 Introduction
    2. 1.2 Kit Contents
    3. 1.3 Specification
    4. 1.4 Device Information
    5.     General Texas Instruments High Voltage Evaluation (TI HV EVM) User Safety Guidelines
  7. 2Hardware
    1. 2.1 Test Points
      1. 2.1.1 Key Connections
        1. 2.1.1.1 Connect a Supply to J3 Connector
        2. 2.1.1.2 PWM Input
        3. 2.1.1.3 J1 Connector: Power Supply
    2. 2.2 Power-Up Procedure
      1. 2.2.1 Step 1: Driver Bias Supply
      2. 2.2.2 Step 2: Input Supply
      3. 2.2.3 Step 3: Measure SW Voltage
      4. 2.2.4 Setting Dead-Time
    3. 2.3 Power-Down Procedure
    4. 2.4 Assembly Guidelines
  8. 3Implementation Results
    1. 3.1 Electrical Performance Specifications
      1. 3.1.1 Evaluation Setup
      2. 3.1.2 Performance Data and Results
  9. 4Hardware Design Files
    1. 4.1 Schematic
    2. 4.2 PCB Layouts
    3. 4.3 Bill of Materials
  10. 5Additional Information
    1. 5.1 Trademarks

1.4 Device Information

The LMG2100R026 device is an 90V continuous, 100V pulsed, 53A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. This offers an excellent choice for high-frequency, high power density, and efficient power conversion.

The LMG2100R026 is available in a 7mm x 4.5mm x 0.89mm lead-free QFN package with exposed die on the top side for cooling. Power pins of the device are optimized to accommodate easy PCB layout to achieve smaller power loop. The device supports 3.3V and 5V input logic levels for the gate signals.