SPRUI30H November 2015 – May 2024 DRA745 , DRA746 , DRA750 , DRA756
NAND device data read and write accesses are achieved through a read or write request to the chip-select-associated memory region at any address location in the region or through a read or write request to the GPMC_NAND_DATA_i location (where i = 0 to 7) mapped in the chip-select-associated control register region. GPMC_NAND_DATA_i is not a true register, but an address location to enable nRE or nWE signal control. The associated chip-select signal timing control must be programmed according to the NAND device timing specification.
Reading data from the GPMC_NAND_DATA_i location or from any location in the associated chip-select memory region activates an asynchronous read access.
ALE, CLE, and nWE are maintained inactive.
Figure 15-82 shows the NAND data read cycle.
Writing data to the GPMC_NAND_DATA_i location or to any location in the associated chip-select memory region activates an asynchronous write access.
Figure 15-83 shows the NAND data write cycle.