This user’s guide describes the evaluation module (EVM) for the TPS1211-Q1 smart high-side driver. The document provides EVM configuration information and test setup details for evaluating the TPS1211-Q1 device. The EVM schematic, board layout, and bill of materials (BOM) are also included.
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The TPS1211Q1EVM allows reference circuit evaluation of TI's smart high-side driver TPS1211-Q1. The TPS1211-Q1 has an operating range of 3.5 V–40 V and has strong gate drive strength of 4 A to enable switching parallel MOSFETs in high current designs. The controller TPS1211-Q1 can drive back-to-back N-channel MOSFETs and also has a separate pre-charge driver (G) with independent control input (INP_G) to drive large capacitive loads. The device provides two-level adjustable overcurrent protection with adjustable circuit breaker timer, fast short-circuit protection, accurate analog current monitor output, and remote overtemperature protection.