SCDS300E July   2010  – June 2020 TS3USB221A-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Block Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Dynamic Electrical Characteristics: VCC = 3.3 V
    7. 6.7  Dynamic Electrical Characteristics: VCC = 2.5 V
    8. 6.8  Switching Characteristics: VCC = 3.3 V
    9. 6.9  Switching Characteristics: VCC = 2.5 V
    10. 6.10 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Low Power Mode
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resource
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level H2
    • Device CDM ESD Classification Level C5
  • VCC Operation at 2.5 V to 3.3 V
  • VI/O Accepts Signals Up to 5.5 V
  • 1.8-V Compatible Control-Pin Inputs
  • Low-Power Mode When OE Is Disabled (1 µA)
  • rON = 16 Ω Maximum
  • ΔrON = 0.2 Ω Typical
  • Cio(on) = 6 pF Typical
  • Low Power Consumption (30 µA Maximum)
  • High Bandwidth (900 MHz Typical)
  • ESD Performance Tested Per JESD 22
    • 7000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • ESD Performance I/O to GND Per JESD 22
    • 12-kV Human-Body Model