The purpose of this study is to characterize the single-event effects (SEE) performance due to heavy-ion irradiation of the ADC3683-SP. Heavy-ions with LETEFF (Effective Linear Energy Transfer) of up to 79MeV × cm2/ mg were used to irradiate the device. Tests were run across a range of flux and fluences for the characterization. Flux was between 102 ions / (cm2 × s) and 105 ions / (cm2 × s) and fluence between 105 ions / cm2 and 107 ions / cm2 per run. The results demonstrated that the ADC3683-SP is single event latch-up free at T = 125°C. Single event upsets are characterized at 25°C and no functional interrupts (power-cycle events) were seen up to 79MeV × cm2/ mg. See Section 8 for more details.
LabVIEW™ is a trademark of National Instruments.
HP-Z4® is a registered trademark of HP Development Company, L.P..
All trademarks are the property of their respective owners.
The ADC3683-SP is a low noise, ultra-low power 18- bit 65 MSPS high-speed dual channel ADC. Designed for lowest noise performance, the device delivers a noise spectral density of -160 dBFS/Hz combined with excellent linearity and dynamic range. The ADC3683-SP offers DC precision together with IF sampling support, making the device applicable for a wide range of applications. High-speed control loops benefit from the short latency as low as only one clock cycle. The ADC consumes only 94mW/ch at 65Msps and the power consumption scales well with lower sampling rates.
The device uses a serial LVDS (SLVDS) interface to output the data which minimizes the number of digital interconnects. The device supports two-lane, one-lane and half-lane options. The device is a pin-to-pin compatible with the 14-bit, 125MSPS ADC3664- SP. The ADC3683-SP comes in a 64-pin HBP CFP package (10.9mm × 10.9mm) and supports a temperature range from -55 to +105°C.
Description (1) | Device Information |
---|---|
Generic Part Number | ADC3683-SP |
Orderable Part Number | 5962F2320401VXC |
Device Function | Low-Noise Dual 18-Bit 65MSPS ADC |
Device Package | 64-pin HBP CFP (10.9mm × 10.9mm) |
Technology | TI C021 65nm CMOS |
Exposure Facility | Radiation Effects Facility Cyclotron Institute, Texas A&M University (15MeV / Nucleon) |
Heavy Ion Fluence per run | Up to 1 × 107 ions/cm2 |
Irradiation Temperature | 25°C (for SET testing) and 125°C (for SEL testing) |
The primary concern of interest for the ADC3683-SP is the robustness against Single-Event Latch-up (SEL) and Single -Event Functional Interrupt (SEFI)
In CMOS technologies, such as the TI 65nm CMOS (C021) process used on the ADC3683-SP, the CMOS circuitry introduces a potential for SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts) [1, 2]. The parasitic bipolar structure initiated by a single-event creates a high-conductance path, which induces a steady-state current that is typically orders-of-magnitude higher than the normal operating current). This current between power and ground persists or is latched until power is removed, the device is reset, or until the device is destroyed by the high-current state. The ADC3683-SP was tested for SEL at above the maximum recommended voltage at 1.9V. The device exhibits no SEL with heavy-ions up to LETEFF = 79MeV × cm2/ mg at flux approximately 105 ions / cm2× s, fluence of approximately 107 ions / cm2, and a die temperature of 125°C, using Pr.
The ADC3683-SP was characterized for SETs at fluxes between 102 ions / cm2× s and 105 ions / cm2× s and with a fluence between 105 ions / cm2and 107 ions/cm2 per run, at room temperature. The ADC3683-SP is SEFI-free (no power-cycle events). For more details, see Single-Event Transients (SET).
The ADC3683-SP is packaged in a 64-pin QFP (TI package code HBP) ceramic package as shown in Figure 3-1. An ADC3683EVMCVAL ceramic device evaluation board was used to evaluate the performance and characteristics of the ADC3683-SP under heavy-ions.
Figure 3-2 shows the top view of the evaluation board used for the radiation testing. For more detail on the EVM used for testing, see ADC36XXEVMCVAL User's Guide.