SBAK021 December   2024 AFE7950-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Introduction
  5. 2Single-Event Effects
  6. 3Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Test Setup and Procedures
  9. 6Destructive Single-Event Effects (DSEE)
  10. 7Single-Event Effects (SEE)
  11. 8Event Rate Calculations
  12. 9References

Introduction

The AFE7950-SP is a high performance, wide bandwidth multi-channel transceiver, integrating four RF sampling transmitter chains, four RF sampling receiver, chains and two RF sampling feedback chains (six RF sampling ADCs total). With operation up to 12GHz, this device enables direct RF sampling in the L, S, C, and X-band frequency ranges without the need for additional frequency conversions stages. This improvement in density and flexibility enables high-channel-count, multi-mission systems.

The TX signal paths support interpolation and digital up conversion options that deliver up to 1200MHz of signal bandwidth for four TX or 2400MHz for two TX. The output of the DUCs drives a 12GSPS DAC (digital to analog converter) with a mixed mode output option to enhance 2nd Nyquist operation. The DAC output includes a variable gain amplifier (TX DSA) with 40dB range and 1dB analog and 0.125dB digital steps.

Each receiver chain includes a 25dB range DSA (Digital Step Attenuator), followed by a 3GSPS ADC (analog-to-digital converter). Each receiver channel has an analog peak power detector and various digital power detectors to assist an external or internal autonomous automatic gain controller, and RF overload detectors for device reliability protection. Flexible decimation options provide optimization of data bandwidth up to 1200MHz for four RX without FB paths or 600MHz with two FB paths (1200MHz BW each).

Table 1-1 Overview Information
DescriptionDevice Information
Generic part numberAFE7950-SP
Orderable part numberAFE7950ALKSHP
Device Function4T6R RF Sampling AFE with 12GSPS DACs and 3GSPS ADCs
Device Package400-pin ALK FCBGA (17x17mm)
TechnologyTSMC C28 28nm Bulk CMOS
Exposure facilityRadiation Effects Facility Cyclotron Institute, Texas A&M University (15MeV/Nucleon)
Heavy Ion Fluence per runUp to 1 x 107 ions/cm2
Irradiation Junction Temperature125°C