SBAK021 December   2024 AFE7950-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Introduction
  5. 2Single-Event Effects
  6. 3Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Test Setup and Procedures
  9. 6Destructive Single-Event Effects (DSEE)
  10. 7Single-Event Effects (SEE)
  11. 8Event Rate Calculations
  12. 9References

6 Destructive Single-Event Effects (DSEE)

During SEL characterization, the device junction temperature was maintained at 125°C. The die temperature was monitored using on chip thermistors.

The species used for the SEL testing was Silver (109Ag) and (Praseodymium (141Pr) ion for an LETEFF of 57.73 and 70.12 MeV·cm2/mg respectively. Flux of 105 ions/cm2·s and a fluence of 107 ions/cm2. Run duration to achieve this fluence was less than 2 minutes. No destructive SEL events were observed during all six runs, indicating that the AFE7950-SP is SEL-free. During SEL runs, the device exhibited SEFI that degraded device performance. A soft-reset and re-programming did not return the device to the pre-beam-exposure nominal-performance state. Power-cycling and re-programming was required to return the device to the pre-beam-exposure nominal-performance state. Table 6-1 shows the SEL test conditions.

Table 6-1 SEL Run Conditions
Run Number Temp Ion LETEFF (MeV·cm2/mg) Flux (ions·cm2/s) Fluence (ions·cm2) PS to EVM Board (V)
1 125°C Ag 57.73 1.00 × 105 1.00 × 107 5.5
2 125°C Ag 57.73 1.00 × 105 1.00 × 107 5.5
3 125°C Ag 57.73 1.00 × 105 1.00 × 107 5.5
4 125°C Pr 70.66 1.00 × 105 1.00 × 107 5.5
5 125°C Pr 70.66 1.00 × 105 1.00 × 107 5.5
6 125°C Pr 70.66 1.00 × 105 1.00 × 107 5.5
AFE7950-SP AFE7950-SP Current During SEL Run #1 Figure 6-1 AFE7950-SP Current During SEL Run #1