SBOK052 May   2024 OPA4H014-SEP

 

  1.   1
  2.   OPA4H014-SEP Single-Event Latch-Up (SEL) Radiation Report
  3.   Trademarks
  4. 1Overview
  5. 2SEE Mechanisms
  6. 3Irradiation Facilities and Telemetry
  7. 4Test Device and Test Board Information
    1. 4.1 Qualification Devices and Test Board
    2. 4.2 Characterization Devices and Test Boards
  8. 5Results
    1. 5.1 SEL Qualification Results
    2. 5.2 SET Characterization Results: TAMU K500 Cyclotron
    3. 5.3 SEE Characterization Results: MSU FRIB Linac
    4. 5.4 Analysis
    5. 5.5 Weibull Fit
  9. 6Summary
  10.   A TAMU Results Appendix
  11.   B MSU Results Appendix
  12.   C Confidence Interval Calculations
  13.   D References

5.3 SEE Characterization Results: MSU FRIB Linac

For correlation purposes, two of the devices (DUT 3 and DUT 5) previously tested at TAMU were re-tested for SEL and SET at MSU's FRIB. The die temperature was held at 125°C as the units were exposed to an ion stream of 129Xe, for a nominal surface LET of 50.4MeV-cm2 / mg (Bragg peak approximately 69.3MeV-cm2 / mg). A nominal flux of 105 ions / s-cm2 was used, with each run concluding once a fluence of 107ions / cm2 was reached. A latch-up was not observed for either DUT.

Testing was performed for each device in unity gain at both minimum and maximum rated supply voltage. Additionally, testing was repeated for each device at room temperature. For all testing, the outputs were observed with oscilloscope cards and transient events were recorded. An input signal of 1V was applied to all channels, with scope window thresholds set at 0.9V and 1.1V. Each output channel was loaded with a 2kΩ resistor to GND (midsupply). See Appendix B for additional data, such as histograms and plots of supply current.

Board Mounted Figure 5-6 Board Mounted
Thermal Camera Figure 5-7 Thermal Camera
Table 5-5 MSU SEE Characterization Run Summary
Run Number DUT Die Temperature (°C) Ion LETeff (MeV-cm2 /mg) Flux ( Ions/s-cm2) Fluence (Ions/cm2) Total Ionizing Dose (rad) VS (V+ − V-) Events (Sum of All Channels)
129 3 125 129Xe 50.4 1.010 × 105 1.003 × 107 8091 4.5 2004
130 3 125 129Xe 50.4 1.010 × 105 1.001 × 107 8079 18 809
131 3 25 129Xe 50.4 1.010 × 105 1.008 × 107 8137 18 645
132 3 25 129Xe 50.4 1.010 × 105 1.006 × 107 8119 4.5 1785
133 5 125 129Xe 50.4 1.010 × 105 1.001 × 107 8088 4.5 1882
134 5 125 129Xe 50.4 1.010 × 105 9.999 × 106 8080 18 793
135 5 25 129Xe 50.4 1.010 × 105 1.007 × 107 8135 18 755
136 5 25 129Xe 50.4 1.010 × 105 1.008 × 107 8149 4.5 1766

The data supports the conclusion that the OPA4H014-SEP is robust against SEL to the maximum recommended supply voltage (18V) when exposed to heavy ions up to 50LETeff (MeV-cm2 / mg). Testing with the die at 125°C was observed to yield higher (10% on average) event counts per run than testing at ambient temperatures.