SBOK073 august   2023 TRF0206-SP

PRODUCTION DATA  

  1.   1
  2.   2
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Unbiased
      2. 2.3.2 Biased
    4. 2.4 Test Configuration and Condition
  6. 3Total Ionizing Dose Characterization Test Results
    1. 3.1 Total Ionizing Dose RHA Characterization Summary Results
  7. 4Applicable and Reference Documents
    1. 4.1 Reference Documents
  8. 5Test List
  9.   A HDR Total Ionizing Dose Report
  10.   B LDR Total Ionizing Dose Report

2.4 Test Configuration and Condition

A step-stress (3 krad(Si), 10 krad(Si), 30 krad(Si), 50 krad(Si), 100 krad(Si)) test method was used to determine the TID hardness level. That is, after a predetermined TID level was reached, an electrical test was performed on a given sample of parts to verify that the units are within specified the SMD electrical test limits. MIL-STD-883, Test Method 1019.9, Condition A and Condition D was used in this case.

The following tables (Table 2-1 through Table 2-4) list the serialized samples that were used during the RHA characterization.

Table 2-1 HDR (200-300 rad(Si)/s) Unbiased Device Information
HDR = 263 rad(Si)/s
Total Samples: 5 unbiased/TID level
Exposure Levels:
3 krad(Si) 10 krad(Si) 30 krad(Si) 50 krad(Si) 100 krad(Si)
61, 62, 71, 72, 93 26, 36, 45, 80, 92 17, 35, 47, 59 10, 37, 43, 66, 88 3, 7, 28, 77, 86
Table 2-2 HDR (200-300 rad(Si)/s) Biased Device Information
HDR = 263 rad(Si)/s
Total Samples: 5 biased/TID level
Exposure Levels:
3 krad(Si) 10 krad(Si) 30 krad(Si) 50 krad(Si) 100 krad(Si)
6, 18, 31, 41, 51 63, 73, 83, 84, 94 4, 5, 16, 46, 57, 69 25, 30, 33, 56, 81 11, 15, 60, 79, 85
Table 2-3 LDR (≤10 mrad(Si)/s) Unbiased Device Information
LDR = 0.01 rad(Si)/s
Total Samples: 5 unbiased/TID level
Exposure Levels:
3 krad(Si) 10 krad(Si) 30 krad(Si) 50 krad(Si) 100 krad(Si)
201, 202, 206, 207, 208 201, 202, 206, 207, 208 201, 202, 206, 207, 208 201, 202, 206, 207, 208 201, 202, 206, 207, 208
Table 2-4 LDR (≤10 mrad(Si)/s) Biased Device Information
LDR = 0.01 rad(Si)/s
Total Samples: 5 biased/TID level
Exposure Levels:
3 krad(Si) 10 krad(Si) 30 krad(Si) 50 krad(Si) 100 krad(Si)
179, 180, 181, 182, 200 179, 180, 181, 182, 200 179, 180, 181, 182, 200 179, 180, 181, 182, 200 6, 7, 8, 18, 26