SBOS758F April   2016  – June 2024 THS6212

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics VS = 12 V
    6. 5.6 Electrical Characteristics VS = 28 V
    7. 5.7 Timing Requirements
    8. 5.8 Typical Characteristics: VS = 12 V
    9. 5.9 Typical Characteristics: VS = 28 V
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Output Voltage and Current Drive
      2. 6.3.2 Driving Capacitive Loads
      3. 6.3.3 Distortion Performance
      4. 6.3.4 Differential Noise Performance
      5. 6.3.5 DC Accuracy and Offset Control
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Wideband Current-Feedback Operation
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Dual-Supply Downstream Driver
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
          1. 7.2.2.2.1 Line Driver Headroom Requirements
          2. 7.2.2.2.2 Computing Total Driver Power for Line-Driving Applications
    3. 7.3 Best Design Practices
    4. 7.4 Power Supply Recommendations
    5. 7.5 Layout
      1. 7.5.1 Layout Guidelines
      2. 7.5.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

9 Revision History

Changes from Revision E (May 2021) to Revision F (June 2024)

  • Updated Package Information table in Description Go
  • Deleted maximum junction temperature continuous operation, long-term reliability from Absolute Maximum Ratings Go

Changes from Revision D (November 2019) to Revision E (May 2021)

  • Updated the numbering format for tables, figures, and cross-references throughout the documentGo
  • Changed mid-bias mode value from 17.7 mA to 17.5 mA in Features Go
  • Changed low-bias mode value from 12.2 mA to 11.9 mA in Features Go
  • Changed voltage noise value from 2.7 nV/√Hz to 2.5 nV/√Hz in Features Go
  • Changed inverting current noise value from 17 pA/√Hz to 18 pA/√Hz in Features Go
  • Changed noninverting current noise value from 1.2 pA/√Hz to 1.4 pA/√Hz in Features Go
  • Changed HD2 distortion from –100 dBc to –86 dBc in Features Go
  • Changed HD3 distortion from –89 dBc –101 dBc inFeatures Go
  • Changed output current from > 416 mA to > 665 mA in Features Go
  • Changed output swing from 43.2 Vpp to 49 Vpp in Features Go
  • Changed bandwidth from 150 MHz to 205 MHz in Features Go
  • Changed PSRR from 50 dB to > 55 dB in Features Go
  • Changed thermal protection from 170°C to 175°C in Features Go
  • Changed differential distortion to HD2 and updated values in Description Go
  • Changed output swing from 43.2Vpp to 49Vpp in Description Go
  • Changed power supplies from ± 12V to 28V in Description Go
  • Changed current drive from 416mA to 650mA in Description Go
  • Deleted YS bond pad package from documentGo
  • Changed Typical Line-Driver Circuit Using the THS6212 figureGo
  • Removed YS die package and Bond Pad Functions tableGo
  • Deleted Output current, IO from Absolute Maximum Ratings Go
  • Added Bias control pin voltage in Absolute Maximum Ratings Go
  • Added Input voltage to all pins except VS+, VS-, and BIAS control in Absolute Maximum Ratings Go
  • Added Input current limit in Absolute Maximum Ratings Go
  • Changed Maximum junction, TJ from 130 C to 125 C in Absolute Maximum Ratings Go
  • Deleted ESD MM in ESD Ratings Go
  • Changed Operating junction temperature from 130°C to 125°C in Recommended Operating Conditions Go
  • Added Minimum ambient operating air temperature spec in Recommended Operating Conditions Go
  • Changed RΘJA from 33.2 °C/W to 42.3 °C/W in Thermal Information Go
  • Changed RΘJC(Top) from 31.7 °C/W to 32.8 °C/W in Thermal Information Go
  • Changed RΘJB from 11.3 °C/W to 20.9 °C/W in Thermal Information Go
  • Changed ψJT from 0.4 °C/W to 3.8 °C/W in Thermal Information Go
  • Changed ψJB from 11.3 °C/W to 20.9 °C/W in Thermal Information Go
  • Changed ψJC(bot) from 3.9 °C/W to 9.5 °C/W in Thermal Information Go
  • Added Electrical Characteristics: VS = 12 V Go
  • Deleted Electrical Characteristics: VS = ±6 V Go
  • Added Electrical Characteristics: VS = 28 V Go
  • Changed tON from 1µs to 25ns in Timing Requirements Go
  • Changed tOFF from 1µs to 275ns in Timing Requirements Go
  • Added Typical Characteristics: VS = 12 VGo
  • Deleted Typical Characteristics: VS = ±6 V (Full Bias)Go
  • Deleted Typical Characteristics: VS = ±6 V (Mid Bias)Go
  • Deleted Typical Characteristics: VS = ±6 V (Low Bias)Go
  • Added Typical Characteristics: VS = 28 VGo
  • Deleted Typical Characteristics: VS = ±12 V (Full Bias)Go
  • Deleted Typical Characteristics: VS = ±12 V (Mid Bias)Go
  • Deleted Typical Characteristics: VS = ±12 V (Low Bias)Go
  • Changed output swing from 43.2 Vpp to 49 Vpp in Overview sectionGo
  • Changed current drive from 416 mA to 650 mA in Overview sectionGo
  • Changed thermal protection junction temperature from 170°C to 175°C in Overview sectionGo
  • Deleted Output Current and Voltage sectionGo
  • Added Output Voltage and Current Drive sectionGo
  • Changed referenced figures for RS versus capacitive load in Driving Capacitive Loads sectionGo
  • Changed ±12-V supplies to 28-V supply in Distortion Performance Go
  • Changed ±6-V supplies to 12-V supply in Distortion Performance Go
  • Updated noise evaluation in Differential Noise Performance Go
  • Added RS = 50 Ω in Differential Noise Performance Go
  • Changed 38.9 nV/√Hz calculation to 53.3 nV/√Hz in Differential Noise Performance Go
  • Changed 7 nV/√Hz calculation to 6.5 nV/√Hz in Differential Noise Performance Go
  • Changed output offset calculation to typical rather than worst case in DC Accuracy and Offset Control sectionGo
  • Changed quiescent current value from 23 mA to 19.5 mA in Wideband Current-Feedback Operation sectionGo
  • Changed swing from 1.9 V from either rail to 49 Vpp in Wideband Current-Feedback Operation sectionGo
  • Changed current drive from 416 mA to 650 mA inWideband Current-Feedback Operation sectionGo
  • Changed ± 6 V supply to 28 V supply inWideband Current-Feedback Operation sectionGo
  • Changed 140 MHz bandwidth to 285 MHz inWideband Current-Feedback Operation sectionGo
  • Changed Noninverting Differential I/O Amplifierfigure inWideband Current-Feedback Operation sectionGo
  • Changed Frequency Response and Harmonic Distortion figures in Application Curves sectionGo
  • Changed Dual-Supply Downstream Driver figureGo
  • Changed supply voltages to ±14 V in Line Driver Headroom Requirements sectionGo
  • Changed quiescent current value from 23 mA to 19.5 mA and ±12 V to ±14 V in Computing Total Driver Power for Line-Driving Applications Go
  • Changed 23 mA to 19.5 mA, 24 V to 28 V and 1003 mW to 11 mW in Computing Total Driver Power for Line-Driving Applications Go
  • Changed supply range from "±5 V to ±14 V" to "10 V to 28 V" in Power Supply Recommendations sectionGo
  • Changed referenced figures for RS versus capacitive load in Driving Capacitive Loads sectionGo
  • Deleted Wafer and Die Information sectionGo
  • Changed ±12-V to 28-V in Layout Guidelines sectionGo

Changes from Revision C (May 2016) to Revision D (November 2019)

  • Added last two Features bullets Go
  • Added GND pin voltage spec in Recommended Operating Conditions Go
  • Added last paragraph to Overview section Go
  • Changed Dual-Supply Downstream Driver figureGo

Changes from Revision B (May 2018) to Revision C (July 2018)

  • Added YS bond pad package to document Go
  • Added YS die package and Bond Pad Functions table Go
  • Added Wafer and Die Information sectionGo

Changes from Revision A (March 2017) to Revision B (May 2018)

  • Changed full-bias mode value from 21 mA to 23 mA in Features Go
  • Changed mid-bias mode value from 16.2 mA to 17.7 mA in Features Go
  • Changed low-bias mode value from 11.2 mA to 12.2 mA in Features Go
  • Added "With Exposed Thermal Pad" to pinout drawing description to Pin Configuration and Functions section Go
  • Changed quiescent current value from 21 mA to 23 mA in Wideband Current-Feedback Operation sectionGo
  • Changed quiescent current value from 21 mA to 23 mA in Computing Total Driver Power for Line-Driving Applications Go
  • Changed 21 mA to 23 mA and 955 mW to 1003 mW in Computing Total Driver Power for Line-Driving Applications Go
  • Changed Board Layout Guidelines section title to Layout Guidelines to align with standardsGo

Changes from Revision * (May 2016) to Revision A (March 2017)

  • Changed document title from THS6212 Differential, Line-Driver Amplifier to THS6212 Differential Broadband PLC Line Driver Amplifier Go
  • Changed line-driver applications (such as wide-band, power-line communications) to broadband and wideband power line communications (PLC) line driver applications in second sentence of Description Go