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  • TRF1108 Near-DC to 8GHz, Differential to Single-Ended RF Amplifier

    • SBOSAA3A July   2024  – November 2024 TRF1108

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  • TRF1108 Near-DC to 8GHz, Differential to Single-Ended RF Amplifier
  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 AC-Coupled Configuration
      2. 6.3.2 DC-Coupled Configuration
    4. 6.4 Device Functional Modes
      1. 6.4.1 Power-Down Mode
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Thermal Considerations
    2. 7.2 Typical Application
      1. 7.2.1 RF DAC Buffer Amplifier
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Single-Supply Operation
      2. 7.3.2 Dual-Supply Operation
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
  12. IMPORTANT NOTICE
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Data Sheet

TRF1108 Near-DC to 8GHz, Differential to Single-Ended RF Amplifier

1 Features

  • Differential-to-single-ended (D2S) RF amplifier
  • Near-DC to 8GHz
  • Gain: 15.5dB at 2GHz
  • OP1dB:
    • 2GHz: 12dBm
    • 6GHz: 10dBm
  • OIP3:
    • 2GHz: 28dBm
    • 6GHz: 28.5dBm
  • Noise figure (NF) and input noise spectral density:
    • 2GHz: 11dB and –163dBm/Hz
    • 6GHz: 11.5dB and –162.5dBm/Hz
  • HD2 and HD3:
    • HD2 (1GHz): –60dBc at 2dBm
    • HD3 (1GHz): –58dBc at 2dBm
  • Additive (residual) phase noise:
    • 1GHz: –154.6dBc/Hz at 10kHz offset
  • Gain and phase imbalance: ±0.6dB and ±2º
  • Differential input matched to 100Ω
  • Single-ended output matched to 50Ω
  • Power-down feature
  • 5V supply
  • Active current: 170mA

2 Applications

  • Directly interfaces with RF DACs
  • Aerospace and defense
  • Phased array radar
  • Military radios
  • 4G and 5G wireless BTS
  • Test and measurement
  • Active probe

3 Description

The TRF1108 is a very high-performance, differential-to-single-ended (D2S) amplifier optimized for radio-frequency (RF) applications. The device is an excellent choice for applications that require a D2S conversion at the output of digital-to-analog converter (DAC) such as the high-performance DAC39RF10 or AFE7950. The on-chip matching components simplify printed-circuit-board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF 2mm × 2mm package.

The primary use-case of the TRF1108 is in ac-coupled applications, where the device operates using a single, 5V supply with an internally set common-mode voltage that simplifies biasing. With the help of an application circuit to set the input common-mode voltage, and by using dual supplies, the amplifier can be dc-coupled. A power-down feature is also available for power savings.

Package Information
PART NUMBER(1) PACKAGE PACKAGE SIZE(2)
TRF1108 RPV (WQFN-FCRLF, 12) 2mm × 2mm
(1) For more information, see Section 10.
(2) The package size (length × width) is a nominal value and includes pins.
TRF1108 TRF1108 Driven by an RF DAC TRF1108 Driven by an RF DAC

 

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