SBOSAA3A July   2024  – November 2024 TRF1108

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 AC-Coupled Configuration
      2. 6.3.2 DC-Coupled Configuration
    4. 6.4 Device Functional Modes
      1. 6.4.1 Power-Down Mode
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Thermal Considerations
    2. 7.2 Typical Application
      1. 7.2.1 RF DAC Buffer Amplifier
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Single-Supply Operation
      2. 7.3.2 Dual-Supply Operation
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.5 Electrical Characteristics

at TA = 25oC, single supply operation with VDD = 5V, 100nF ac-coupling capacitors at input and output, differential input with RS = 100Ω, output with RL = 50Ω (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
AC PERFORMANCE
Ssd21 Gain f = 0.5GHz 15.4 dB
f = 2GHz 15.5
f = 4GHz 16.3
f = 6GHz 17.4
f = 8GHz 18
Sdd11 Input return loss f = 10MHz to 8GHz –15 dB
Sss22 Output return loss f = 10MHz to 8GHz –12 dB
Sds12 Reverse isolation f = 10MHz to 8GHz –45 dB
ImbGAIN Gain imbalance f = 10MHz to 8GHz ±0.6 dB
ImbPHASE Phase imbalance f = 10MHz to 8GHz ±2 degrees
CMRR Common-mode rejection ratio  f = 2GHz –45 dB
OP1dB Output 1dB compression point f = 0.5GHz 12 dBm
f = 2GHz 12
f = 4GHz 12
f = 6GHz 10
f = 8GHz 8
NF Noise figure f = 0.5GHz 10.5 dB
f = 2GHz 11
f = 4GHz 11
f = 6GHz 11.5
f = 8GHz 12.5
OIP2 Output second-order intercept point f = 0.5GHz, Pout = –4dBm per tone                     
(10MHz spacing)		 63 dBm
f = 1GHz, Pout = –4dBm per tone                         
(10MHz spacing)		 57
f = 2GHz, Pout = –4dBm per tone                       
(10MHz spacing)		 46
f = 4GHz, Pout = –4dBm per tone                         
(10MHz spacing)		 34
OIP3 Output third-order intercept point f = 0.5GHz, Pout = –4dBm per tone                     
(10MHz spacing)		 32 dBm
f = 2GHz, Pout = –4dBm per tone               
(10MHz spacing)		 28
f = 4GHz, Pout = –4dBm per tone                       
(10MHz spacing)		 27
f = 6GHz, Pout = –4dBm per tone                       
(10MHz spacing)		 28.5
f = 8GHz, Pout = –4dBm per tone               
(10MHz spacing)		 20
HD2 Second-order harmonic distortion f = 0.5GHz, Pout = 2dBm –68 dBc
f = 1GHz, Pout = 2dBm –60
f = 2GHz, Pout = 2dBm –52
f = 4GHz, Pout = 2dBm –39
HD3 Third-order harmonic distortion f = 0.5GHz, Pout = 2dBm –63 dBc
f = 1GHz, Pout = 2dBm –58
f = 2GHz, Pout = 2dBm –51
IMD2 Second-order intermodulation distortion f = 0.5GHz, Pout =  –4dBm per tone                     
(10MHz spacing)		 –67 dBc
f = 1GHz, Pout =  –4dBm per tone                       
(10MHz spacing)		 –61
f = 2GHz, Pout =  –4dBm per tone                         
(10MHz spacing)		 –50
f = 4GHz, Pout =  –4dBm per tone                         
(10MHz spacing)		 –38
IMD3 Third-order intermodulation distortion f = 0.5GHz, Pout =  –4dBm per tone                 
(10MHz spacing)		 –72 dBc
f = 2GHz, Pout =  –4dBm per tone             
(10MHz spacing)		 –64
f = 4GHz, Pout =  –4dBm per tone                   
(10MHz spacing)		 –62
f = 6GHz, Pout =  –4dBm per tone                       
(10MHz spacing)		 –65
f = 8GHz, Pout =  –4dBm per tone                     
(10MHz spacing)		 –48
PN Additive (residual) phase noise f = 1GHz, Pout = 6dBm, 100Hz offset –138.9 dBc/Hz
f = 1GHz, Pout = 6dBm, 1kHz offset –148
f = 1GHz, Pout = 6dBm, 10kHz offset –154.6
DC CHARACTERISTICS
VICM Input common-mode voltage VSS + 1.34 V
VOB DC output bias voltage VDD – 1.68 V
ZI Differential input impedance f = dc (internal to the device) 100 Ω
ZO Single-ended output impedance f = dc (internal to the device) 30 Ω
TRANSIENT
tREC Overdrive recovery time Using a 0.9Vp differential input pulse duration of 1.5ns 2 ns
POWER SUPPLY
IQA Active current Current on VDD pin, PD = 0 170 mA
IQPD Power-down quiescent current Current on VDD pin, PD = 1 13 mA
POWER DOWN
VPDHIGH PD pin logic high VSS + 1.45 V
VPDLOW PD pin logic low VSS + 0.8 V
IPDBIAS PD bias current Current on PD pin, PD = high (1.8V logic) 40 75 µA
Current on PD pin, PD = high (3.3V logic) 200 250 µA
CPD PD pin capacitance 2 pF