SBVS066S December 2005 – November 2024 TPS74401
PRODUCTION DATA
The TPS74401 offers industry-leading dropout performance, making the device excellent for high-current, low VIN and low VOUT applications. The extremely low dropout of the TPS74401 also allows the device to be used in place of a dc/dc converter and also achieve good efficiencies. Equation 3 provides a quick estimate of the efficiencies.
This efficiency allows users to redesign the power architecture to achieve a small, simple, and low-cost option.
There are two different specifications for dropout voltage with the TPS74401. The first specification (see Figure 7-12) is referred to as VIN Dropout and is for users who wish to apply an external bias voltage to achieve low dropout. This specification assumes that VBIAS is at least 1.62V above VOUT; for example, when VBIAS is powered by a 3.3V rail with 5% tolerance and with VOUT = 1.5V. If VBIAS is higher than (3.3V × 0.95) or VOUT is less than 1.5V, VIN dropout is less than specified.
The second specification (see Figure 7-13) is referred to as VBIAS Dropout and is for users who wish to have VBIAS < VIN + 1.62V. This option allows the device to be used in applications where an auxiliary bias voltage is not available or low dropout is not required. Dropout is limited by BIAS in these applications because VBIAS provides the gate drive to the pass transistor and therefore must be greater than VOUT + VDO (VBIAS). Because of this usage, IN and BIAS tied together easily consume excessive power. Pay attention and do not exceed the power rating of the IC package.