SCDS434B October   2021  – March 2023 TMUX8211 , TMUX8212 , TMUX8213

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings: TMUX821x Devices
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions: TMUX821x Devices
    4. 7.4  Source of Drain Continuous Current
    5. 7.5  Source of Drain Pulse Current
    6. 7.6  Thermal Information
    7. 7.7  Electrical Characteristics (Global): TMUX821x Devices
    8. 7.8  Electrical Characteristics (±15-V Dual Supply)
    9. 7.9  Electrical Characteristics (±36-V Dual Supply)
    10. 7.10 Electrical Characteristics (±50-V Dual Supply)
    11. 7.11 Electrical Characteristics (72-V Single Supply)
    12. 7.12 Electrical Characteristics (100-V Single Supply)
    13. 7.13 Switching Characteristics: TMUX821x Devices
    14. 7.14 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 On-Resistance
    2. 8.2 Off-Leakage Current
    3. 8.3 On-Leakage Current
    4. 8.4 Device Turn-On and Turn-Off Time
    5. 8.5 Charge Injection
    6. 8.6 Off Isolation
    7. 8.7 Crosstalk
    8. 8.8 Bandwidth
    9. 8.9 THD + Noise
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Bidirectional Operation
      2. 9.3.2 Flat On-Resistance
      3. 9.3.3 Protection Features
        1. 9.3.3.1 Fail-Safe Logic
        2. 9.3.3.2 ESD Protection
        3. 9.3.3.3 Latch-Up Immunity
      4. 9.3.4 1.8 V Logic Compatible Inputs
      5. 9.3.5 Integrated Pull-Down Resistor on Logic Pins
    4. 9.4 Device Functional Modes
      1. 9.4.1 Normal Mode
      2. 9.4.2 Truth Tables
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

13.5 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.