SCDS434B October   2021  – March 2023 TMUX8211 , TMUX8212 , TMUX8213

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings: TMUX821x Devices
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions: TMUX821x Devices
    4. 7.4  Source of Drain Continuous Current
    5. 7.5  Source of Drain Pulse Current
    6. 7.6  Thermal Information
    7. 7.7  Electrical Characteristics (Global): TMUX821x Devices
    8. 7.8  Electrical Characteristics (±15-V Dual Supply)
    9. 7.9  Electrical Characteristics (±36-V Dual Supply)
    10. 7.10 Electrical Characteristics (±50-V Dual Supply)
    11. 7.11 Electrical Characteristics (72-V Single Supply)
    12. 7.12 Electrical Characteristics (100-V Single Supply)
    13. 7.13 Switching Characteristics: TMUX821x Devices
    14. 7.14 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 On-Resistance
    2. 8.2 Off-Leakage Current
    3. 8.3 On-Leakage Current
    4. 8.4 Device Turn-On and Turn-Off Time
    5. 8.5 Charge Injection
    6. 8.6 Off Isolation
    7. 8.7 Crosstalk
    8. 8.8 Bandwidth
    9. 8.9 THD + Noise
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Bidirectional Operation
      2. 9.3.2 Flat On-Resistance
      3. 9.3.3 Protection Features
        1. 9.3.3.1 Fail-Safe Logic
        2. 9.3.3.2 ESD Protection
        3. 9.3.3.3 Latch-Up Immunity
      4. 9.3.4 1.8 V Logic Compatible Inputs
      5. 9.3.5 Integrated Pull-Down Resistor on Logic Pins
    4. 9.4 Device Functional Modes
      1. 9.4.1 Normal Mode
      2. 9.4.2 Truth Tables
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

7.11 Electrical Characteristics (72-V Single Supply)

VDD = +72 V ± 10%, VSS = 0 V, GND = 0 V (unless otherwise noted) 
Typical at TA = 25℃  (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0 V to 60 V
ID = –10 mA		 25°C 5 7 Ω
–40°C to +85°C 8
–40°C to +125°C 10
ΔRON On-resistance mismatch between channels VS = 0 V to 60 V
ID = –10 mA		 25°C 0.2 0.3 Ω
–40°C to +85°C 0.4
–40°C to +125°C 0.5
RON FLAT On-resistance flatness VS = 0 V to 60 V
ID = –10 mA		 25°C 0.05 Ω
RON DRIFT On-resistance drift VS = 0 V, IS = –10 mA –40°C to +125°C 0.03 Ω/°C
IS(OFF) Source off leakage current(1) Switch state is off
VS = +60 V / 1 V
VD = 1 V / +60 V		 25°C 0.01 nA
–40°C to +85°C –4 4
–40°C to +125°C –40 40
ID(OFF) Drain off leakage current(1) Switch state is off
VS = +60 V / 1 V
VD = 1 V / +60 V		 25°C 0.01 nA
–40°C to +85°C –4 4
–40°C to +125°C –40 40
IS(ON)
ID(ON)		 Channel on leakage current(2) Switch state is on
VS = VD = 1 V / +60 V		 25°C 0.01 nA
–40°C to +85°C –2 2
–40°C to +125°C –5 5
ΔIS(ON)
ΔID(ON)		 Leakage current mismatch between channels(2) Switch state is on
VS = VD = 1 V / +60 V		 25°C 15 pA
85°C 75
125°C 300
(1) When VS is 60 V, VD is 1 V. Or when VS is 1 V, VD is 60 V.
(2) When VS is at a voltage potential, VD is floating. Or when VD is at a voltage potential, VS is floating.