SLAA392A March 2008 – August 2018 MSP430BT5190 , MSP430F1101 , MSP430F1101A , MSP430F1111A , MSP430F112 , MSP430F1121 , MSP430F1121A , MSP430F1122 , MSP430F1132 , MSP430F122 , MSP430F1222 , MSP430F123 , MSP430F1232 , MSP430F133 , MSP430F135 , MSP430F147 , MSP430F1471 , MSP430F148 , MSP430F1481 , MSP430F149 , MSP430F1491 , MSP430F155 , MSP430F156 , MSP430F157 , MSP430F1610 , MSP430F1611 , MSP430F1612 , MSP430F167 , MSP430F168 , MSP430F169 , MSP430F2001 , MSP430F2002 , MSP430F2003 , MSP430F2011 , MSP430F2012 , MSP430F2013 , MSP430F2013-EP , MSP430F2101 , MSP430F2111 , MSP430F2112 , MSP430F2121 , MSP430F2122 , MSP430F2131 , MSP430F2132 , MSP430F2232 , MSP430F2234 , MSP430F2252 , MSP430F2252-Q1 , MSP430F2254 , MSP430F2272 , MSP430F2272-Q1 , MSP430F2274 , MSP430F233 , MSP430F2330 , MSP430F235 , MSP430F2350 , MSP430F2370 , MSP430F2410 , MSP430F2416 , MSP430F2417 , MSP430F2418 , MSP430F2419 , MSP430F247 , MSP430F2471 , MSP430F248 , MSP430F2481 , MSP430F249 , MSP430F2491 , MSP430F2616 , MSP430F2617 , MSP430F2618 , MSP430F2619 , MSP430F412 , MSP430F413 , MSP430F4132 , MSP430F415 , MSP430F4152 , MSP430F417 , MSP430F423 , MSP430F423A , MSP430F425 , MSP430F4250 , MSP430F425A , MSP430F4260 , MSP430F427 , MSP430F4270 , MSP430F427A , MSP430F435 , MSP430F4351 , MSP430F436 , MSP430F4361 , MSP430F437 , MSP430F4371 , MSP430F438 , MSP430F439 , MSP430F447 , MSP430F448 , MSP430F4481 , MSP430F449 , MSP430F4491 , MSP430F4616 , MSP430F46161 , MSP430F4617 , MSP430F46171 , MSP430F4618 , MSP430F46181 , MSP430F4619 , MSP430F46191 , MSP430F47126 , MSP430F47127 , MSP430F47163 , MSP430F47166 , MSP430F47167 , MSP430F47173 , MSP430F47176 , MSP430F47177 , MSP430F47183 , MSP430F47186 , MSP430F47187 , MSP430F47193 , MSP430F47196 , MSP430F47197 , MSP430F477 , MSP430F478 , MSP430F4783 , MSP430F4784 , MSP430F479 , MSP430F4793 , MSP430F4794 , MSP430F5131 , MSP430F5132 , MSP430F5151 , MSP430F5152 , MSP430F5171 , MSP430F5172 , MSP430F5304 , MSP430F5308 , MSP430F5309 , MSP430F5310 , MSP430F5324 , MSP430F5325 , MSP430F5326 , MSP430F5327 , MSP430F5328 , MSP430F5329 , MSP430F5333 , MSP430F5336 , MSP430F5338 , MSP430F5340 , MSP430F5341 , MSP430F5342 , MSP430F5418 , MSP430F5418A , MSP430F5419 , MSP430F5419A , MSP430F5435 , MSP430F5435A , MSP430F5436 , MSP430F5436A , MSP430F5437 , MSP430F5437A , MSP430F5438 , MSP430F5438A , MSP430F5500 , MSP430F5501 , MSP430F5502 , MSP430F5503 , MSP430F5504 , MSP430F5505 , MSP430F5506 , MSP430F5507 , MSP430F5508 , MSP430F5509 , MSP430F5510 , MSP430F5513 , MSP430F5514 , MSP430F5515 , MSP430F5517 , MSP430F5519 , MSP430F5521 , MSP430F5522 , MSP430F5524 , MSP430F5525 , MSP430F5526 , MSP430F5527 , MSP430F5528 , MSP430F5529 , MSP430F5630 , MSP430F5631 , MSP430F5632 , MSP430F5633 , MSP430F5634 , MSP430F5635 , MSP430F5636 , MSP430F5637 , MSP430F5638 , MSP430F6433 , MSP430F6435 , MSP430F6436 , MSP430F6438 , MSP430F6630 , MSP430F6631 , MSP430F6632 , MSP430F6633 , MSP430F6634 , MSP430F6635 , MSP430F6636 , MSP430F6637 , MSP430F6638 , MSP430FE423 , MSP430FE4232 , MSP430FE423A , MSP430FE4242 , MSP430FE425 , MSP430FE4252 , MSP430FE425A , MSP430FE427 , MSP430FE4272 , MSP430FE427A , MSP430FG4250 , MSP430FG4260 , MSP430FG4270 , MSP430FG437 , MSP430FG438 , MSP430FG439 , MSP430FG4616 , MSP430FG4617 , MSP430FG4618 , MSP430FG4619 , MSP430FG477 , MSP430FG478 , MSP430FG479 , MSP430FW423 , MSP430FW425 , MSP430FW427 , MSP430G2001 , MSP430G2101 , MSP430G2102 , MSP430G2111 , MSP430G2112 , MSP430G2121 , MSP430G2131 , MSP430G2132 , MSP430G2152 , MSP430G2201 , MSP430G2201-Q1 , MSP430G2211 , MSP430G2212 , MSP430G2221 , MSP430G2231 , MSP430G2231-Q1 , MSP430G2232 , MSP430G2252 , MSP430G2302 , MSP430G2312 , MSP430G2332 , MSP430G2352 , MSP430G2402 , MSP430G2432 , MSP430G2452 , MSP430L092
This section describes a few intrinsic and extrinsic failure mechanisms of flash memory. Although these mechanisms are applicable to any industry flash, they apply to the MSP430 flash as well. Several tests are in place to ensure that each MSP430 MCU that leaves the factory does not show any of the following symptoms.
Charge Retention
Charge retention is the ability of the flash cell to retain its programmed value during long-term storage. If there are defects in the dielectrics or the substrate, charges can move to or from the floating gate, causing elevated charge loss. Also, with sufficient thermal activation, all bits could lose their charge. Analyses indicate that this failure mechanism occurs well beyond the normal lifetime of the device. Charge retention is discussed more in Section 2.3.
Oxide Degradation
The high fields used during program and erase can result in increased low field leakage through the dielectrics of the cell. This can increase the susceptibility to charge loss of the cell. Analyses and long-term storage results have verified that the post-cycling retention performance of the cells extends well beyond normal lifetimes.
Program and Erase Time Degradation
After a large number of write or erase cycles, a high charge can be trapped in the dielectrics surrounding the floating gate. This charge can decrease the effective field across the cell during program and erase operations, increasing the time required to complete the program and erase operations. Data on TI flash cells has shown that the erase and program time walk-out is well beyond normal use conditions.
Write Disturb
During the program operation, high fields are placed not only on the bit being programmed, but on other bits along the same word line or bit line. If there are defects in the dielectrics or in the substrate, leakage paths can be created, so inadvertent programming of a non-selected bit can be observed. To address this defect mechanism, high-voltage screens are in place in the test program to eliminate such units from the population.
These are some of the failure mechanisms that could occur to any flash, and tests are place to for screen out any MSP430 MCUs that might have them.