SLAA649G October   2014  – August 2021 MSP430F2001 , MSP430F2002 , MSP430F2003 , MSP430F2011 , MSP430F2012 , MSP430F2013 , MSP430F2013-EP , MSP430F2101 , MSP430F2111 , MSP430F2112 , MSP430F2121 , MSP430F2122 , MSP430F2131 , MSP430F2132 , MSP430F2232 , MSP430F2234 , MSP430F2252 , MSP430F2254 , MSP430F2272 , MSP430F2274 , MSP430F2274-EP , MSP430F233 , MSP430F2330 , MSP430F235 , MSP430F2350 , MSP430F2370 , MSP430F2410 , MSP430F2416 , MSP430F2417 , MSP430F2418 , MSP430F2419 , MSP430F247 , MSP430F2471 , MSP430F248 , MSP430F2481 , MSP430F249 , MSP430F249-EP , MSP430F2491 , MSP430F2616 , MSP430F2617 , MSP430F2618 , MSP430F2619 , MSP430F2619S-HT , MSP430FR2032 , MSP430FR2033 , MSP430FR2110 , MSP430FR2111 , MSP430FR2153 , MSP430FR2155 , MSP430FR2310 , MSP430FR2311 , MSP430FR2353 , MSP430FR2355 , MSP430FR2433 , MSP430FR2475 , MSP430FR2476 , MSP430FR2532 , MSP430FR2533 , MSP430FR2632 , MSP430FR2633 , MSP430FR2672 , MSP430FR2673 , MSP430FR2675 , MSP430FR2676 , MSP430FR4131 , MSP430FR4132 , MSP430FR4133 , MSP430G2001 , MSP430G2101 , MSP430G2102 , MSP430G2111 , MSP430G2112 , MSP430G2121 , MSP430G2131 , MSP430G2132 , MSP430G2152 , MSP430G2153 , MSP430G2201 , MSP430G2202 , MSP430G2203 , MSP430G2210 , MSP430G2211 , MSP430G2212 , MSP430G2213 , MSP430G2221 , MSP430G2230 , MSP430G2230-EP , MSP430G2231 , MSP430G2231-EP , MSP430G2232 , MSP430G2233 , MSP430G2252 , MSP430G2253 , MSP430G2302 , MSP430G2302-EP , MSP430G2303 , MSP430G2312 , MSP430G2313 , MSP430G2332 , MSP430G2332-EP , MSP430G2333 , MSP430G2352 , MSP430G2353 , MSP430G2402 , MSP430G2403 , MSP430G2412 , MSP430G2413 , MSP430G2432 , MSP430G2433 , MSP430G2444 , MSP430G2452 , MSP430G2453 , MSP430G2513 , MSP430G2533 , MSP430G2544 , MSP430G2553 , MSP430G2744 , MSP430G2755 , MSP430G2855 , MSP430G2955 , MSP430I2020 , MSP430I2021 , MSP430I2030 , MSP430I2031 , MSP430I2040 , MSP430I2041

 

  1.   Trademarks
  2. 1 Introduction
  3. 2 Comparison of MSP430FR4xx and MSP430FR2xx Devices
  4. 3 In-System Programming of Nonvolatile Memory
    1. 3.1 Ferroelectric RAM (FRAM) Overview
    2. 3.2 FRAM Cell
    3. 3.3 Protecting FRAM Using the Memory Write Protection Bit
    4. 3.4 FRAM Memory Wait States
    5. 3.5 Bootloader (BSL)
    6. 3.6 JTAG and Security
    7. 3.7 Production Programming
  5. 4 Hardware Migration Considerations
  6. 5 Device Calibration Information
  7. 6 Important Device Specifications
  8. 7 Core Architecture Considerations
    1. 7.1 Power Management Module (PMM)
      1. 7.1.1 Core LDO and LPM3.5 LDO
      2. 7.1.2 SVS
      3. 7.1.3 VREF
      4. 7.1.4 Debug in Low-Power Mode
    2. 7.2 Clock System
      1. 7.2.1 DCO Frequencies
      2. 7.2.2 FLL, REFO, and DCO Tap
      3. 7.2.3 FRAM Access at 16 MHz, ADC Clock, and Clocks-on-Demand
    3. 7.3 Operating Modes, Wake-up Times, and Reset
      1. 7.3.1 LPMx.5
      2. 7.3.2 Reset
        1. 7.3.2.1 Behavior of POR and BOR
        2. 7.3.2.2 Reset Generation
        3. 7.3.2.3 Determining the Cause of Reset
    4. 7.4 Interrupt Vectors
    5. 7.5 FRAM and the FRAM Controller
      1. 7.5.1 Flash and FRAM Overview Comparison
      2. 7.5.2 Cache Architecture
  9. 8 Peripheral Considerations
    1. 8.1  Watchdog Timer
    2. 8.2  Ports
      1. 8.2.1 Digital Input/Output
      2. 8.2.2 Capacitive Touch I/O
    3. 8.3  Analog-to-Digital Converters
      1. 8.3.1 ADC10 to ADC
    4. 8.4  Communication Modules
      1. 8.4.1 USI to eUSCI
      2. 8.4.2 USCI to eUSCI
    5. 8.5  Timer and IR Modulation Logic
    6. 8.6  Backup Memory
    7. 8.7  Hardware Multiplier (MPY32)
    8. 8.8  RTC Counter
    9. 8.9  Interrupt Compare Controller (ICC)
    10. 8.10 LCD
    11. 8.11 Smart Analog Combo (SAC)
    12. 8.12 Comparator
  10. 9 ROM Libraries
  11. 10Conclusion
  12. 11References
  13. 12Revision History

7.5.1 Flash and FRAM Overview Comparison

The F2xx family flash controller is replaced by the FRAM controller in the FR4xx family.

The most significant differences between using FRAM and flash pertain to (1) timing and (2) power requirements (see Table 7-3).

Table 7-3 Comparison of Flash and FRAM on MSP430 MCUs
ParameterFRAM (FR4133)(1)Flash (F2274)(1)
Program time for byte or word (maximum)120 ns116 µs (approximately)
Erase time for segment (maximum)Not applicable (pre-erase not required)18 ms
Supply current during program (maximum)No extra current during write
(included in active power specification)		5 mA
Supply current during erase (maximum)Not applicable (pre-erase not required)7 mA
Nonvolatile memory maximum read frequency8 MHz16 MHz
(1) The values in this table are approximations; to find the values for a specific device, see the data sheet.

Because every read from an FRAM location is also a write, there is no current penalty due to write or erase. Hence, the power consumption when writing to a block of FRAM is the same as when reading from it. This is different from flash, where the writing process consumes excess power due to the operation of a device-internal charge pump. Similarly, FRAM does not require an erase before write and is not segmented like flash. Hence, there is no added erase current (or erase time) when writing to FRAM.

In terms of the write time, FRAM is written in four-word blocks, and the write time is built into each read cycle. Hence, there is no difference between the read time and write time for an FRAM byte, word, or 4‑word block. With regards to the read frequency, FRAM accesses (both read and write) are capped at 8 MHz. However, flash reads can take place at the maximum speed allowed by the device (fSYSTEM), which is 16 MHz in the F2xx devices.

The speed of instruction execution in an FRAM-based system is affected by the architecture. The FR4xx uses a cache-based architecture that employs a combination of register and FRAM accesses when executing from nonvolatile memory. This allows the system throughput to be higher than the maximum allowable read frequency of 8 MHz.