SLAA649G October   2014  – August 2021 MSP430F2001 , MSP430F2002 , MSP430F2003 , MSP430F2011 , MSP430F2012 , MSP430F2013 , MSP430F2013-EP , MSP430F2101 , MSP430F2111 , MSP430F2112 , MSP430F2121 , MSP430F2122 , MSP430F2131 , MSP430F2132 , MSP430F2232 , MSP430F2234 , MSP430F2252 , MSP430F2254 , MSP430F2272 , MSP430F2274 , MSP430F2274-EP , MSP430F233 , MSP430F2330 , MSP430F235 , MSP430F2350 , MSP430F2370 , MSP430F2410 , MSP430F2416 , MSP430F2417 , MSP430F2418 , MSP430F2419 , MSP430F247 , MSP430F2471 , MSP430F248 , MSP430F2481 , MSP430F249 , MSP430F249-EP , MSP430F2491 , MSP430F2616 , MSP430F2617 , MSP430F2618 , MSP430F2619 , MSP430F2619S-HT , MSP430FR2032 , MSP430FR2033 , MSP430FR2110 , MSP430FR2111 , MSP430FR2153 , MSP430FR2155 , MSP430FR2310 , MSP430FR2311 , MSP430FR2353 , MSP430FR2355 , MSP430FR2433 , MSP430FR2475 , MSP430FR2476 , MSP430FR2532 , MSP430FR2533 , MSP430FR2632 , MSP430FR2633 , MSP430FR2672 , MSP430FR2673 , MSP430FR2675 , MSP430FR2676 , MSP430FR4131 , MSP430FR4132 , MSP430FR4133 , MSP430G2001 , MSP430G2101 , MSP430G2102 , MSP430G2111 , MSP430G2112 , MSP430G2121 , MSP430G2131 , MSP430G2132 , MSP430G2152 , MSP430G2153 , MSP430G2201 , MSP430G2202 , MSP430G2203 , MSP430G2210 , MSP430G2211 , MSP430G2212 , MSP430G2213 , MSP430G2221 , MSP430G2230 , MSP430G2230-EP , MSP430G2231 , MSP430G2231-EP , MSP430G2232 , MSP430G2233 , MSP430G2252 , MSP430G2253 , MSP430G2302 , MSP430G2302-EP , MSP430G2303 , MSP430G2312 , MSP430G2313 , MSP430G2332 , MSP430G2332-EP , MSP430G2333 , MSP430G2352 , MSP430G2353 , MSP430G2402 , MSP430G2403 , MSP430G2412 , MSP430G2413 , MSP430G2432 , MSP430G2433 , MSP430G2444 , MSP430G2452 , MSP430G2453 , MSP430G2513 , MSP430G2533 , MSP430G2544 , MSP430G2553 , MSP430G2744 , MSP430G2755 , MSP430G2855 , MSP430G2955 , MSP430I2020 , MSP430I2021 , MSP430I2030 , MSP430I2031 , MSP430I2040 , MSP430I2041

 

  1.   Trademarks
  2. 1 Introduction
  3. 2 Comparison of MSP430FR4xx and MSP430FR2xx Devices
  4. 3 In-System Programming of Nonvolatile Memory
    1. 3.1 Ferroelectric RAM (FRAM) Overview
    2. 3.2 FRAM Cell
    3. 3.3 Protecting FRAM Using the Memory Write Protection Bit
    4. 3.4 FRAM Memory Wait States
    5. 3.5 Bootloader (BSL)
    6. 3.6 JTAG and Security
    7. 3.7 Production Programming
  5. 4 Hardware Migration Considerations
  6. 5 Device Calibration Information
  7. 6 Important Device Specifications
  8. 7 Core Architecture Considerations
    1. 7.1 Power Management Module (PMM)
      1. 7.1.1 Core LDO and LPM3.5 LDO
      2. 7.1.2 SVS
      3. 7.1.3 VREF
      4. 7.1.4 Debug in Low-Power Mode
    2. 7.2 Clock System
      1. 7.2.1 DCO Frequencies
      2. 7.2.2 FLL, REFO, and DCO Tap
      3. 7.2.3 FRAM Access at 16 MHz, ADC Clock, and Clocks-on-Demand
    3. 7.3 Operating Modes, Wake-up Times, and Reset
      1. 7.3.1 LPMx.5
      2. 7.3.2 Reset
        1. 7.3.2.1 Behavior of POR and BOR
        2. 7.3.2.2 Reset Generation
        3. 7.3.2.3 Determining the Cause of Reset
    4. 7.4 Interrupt Vectors
    5. 7.5 FRAM and the FRAM Controller
      1. 7.5.1 Flash and FRAM Overview Comparison
      2. 7.5.2 Cache Architecture
  9. 8 Peripheral Considerations
    1. 8.1  Watchdog Timer
    2. 8.2  Ports
      1. 8.2.1 Digital Input/Output
      2. 8.2.2 Capacitive Touch I/O
    3. 8.3  Analog-to-Digital Converters
      1. 8.3.1 ADC10 to ADC
    4. 8.4  Communication Modules
      1. 8.4.1 USI to eUSCI
      2. 8.4.2 USCI to eUSCI
    5. 8.5  Timer and IR Modulation Logic
    6. 8.6  Backup Memory
    7. 8.7  Hardware Multiplier (MPY32)
    8. 8.8  RTC Counter
    9. 8.9  Interrupt Compare Controller (ICC)
    10. 8.10 LCD
    11. 8.11 Smart Analog Combo (SAC)
    12. 8.12 Comparator
  10. 9 ROM Libraries
  11. 10Conclusion
  12. 11References
  13. 12Revision History

5 Device Calibration Information

Some F2xx devices provide a TLV structure that supplies calibration values for the DCO frequency, ADC reference, and internal temperature sensor. The TLV structure is stored in information memory segment A (Info A) and can be erased by the user. A mass erase of the device that occurs if an incorrect BSL password is supplied also erases the factory-calibrated constants.

To prevent this, the TLV information on FR4xx devices is stored in protected FRAM area where it cannot be erased by unintended write operation. For details on the location and access of the TLV, see the device-specific data sheet.

Note:

Another information memory area at 1800h to 19FFh is available for application use on the FR4xx devices, except on the MSP430FR231x and MSP430FR211x devices, with write protection bit of SYSCFG0.DFWP (see Section 3.3).

The TLV structure contains calibration values that can be used to improve the measurement accuracy of various functions. The calibration values available on a given device are shown in the TLV structure of the device-specific data sheet. In the FR4xx data sheets, ADC offset and gain calibration data, and temperature sensor calibration data are provided.

For more information about how to use the TLV in the FR4xx devices, see the device descriptor section in the MSP430FR4xx and MSP430FR2xx family user's guide.