SLOSEC9 September   2024 TSD5402-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements for I2C Interface Signals
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Analog Input and Preamplifier
      2. 6.3.2 Pulse-Width Modulator (PWM)
      3. 6.3.3 Gate Drive
      4. 6.3.4 Power FETs
      5. 6.3.5 Load Diagnostics
        1. 6.3.5.1 Load Diagnostics Sequence
        2. 6.3.5.2 Faults During Load Diagnostics
      6. 6.3.6 Protection and Monitoring
      7. 6.3.7 I2C Serial Communication Bus
        1. 6.3.7.1 I2C Bus Protocol
        2. 6.3.7.2 Random Write
        3. 6.3.7.3 Random Read
        4. 6.3.7.4 Sequential Read
    4. 6.4 Device Functional Modes
      1. 6.4.1 Hardware Control Pins
      2. 6.4.2 EMI Considerations
      3. 6.4.3 Operating Modes and Faults
  8. 7 Register Maps
    1. 7.1 I2C Address Register Definitions
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Amplifier Output Filtering
        2. 8.2.1.2 Amplifier Output Snubbers
        3. 8.2.1.3 Bootstrap Capacitors
        4. 8.2.1.4 Analog Signal Input Filter
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Unused Pin Connections
          1. 8.2.2.1.1 HI-Z Pin
          2. 8.2.2.1.2 STANDBY Pin
          3. 8.2.2.1.3 I2C Pins (SDA and SCL)
          4. 8.2.2.1.4 Terminating Unused Outputs
          5. 8.2.2.1.5 Using a Single-Ended Signal Input
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
        1. 8.4.2.1 Top Layer
        2. 8.4.2.2 Second Layer – Signal Layer
        3. 8.4.2.3 Third Layer – Power Layer
        4. 8.4.2.4 Bottom Layer – Ground Layer
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Third-Party Products Disclaimer
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Option Addendum
      1. 11.1.1 Packaging Information
      2. 11.1.2 Tape and Reel Information

6.3.3 Gate Drive

The gate driver accepts the low-voltage PWM signal and level-shifts the signal to drive a high-current, full-bridge, power FET stage. The device uses proprietary techniques to optimize EMI performance.