SLPS667B February   2017  – June 2024 CSD17318Q2

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Characteristics
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

3 Description

This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package.

CSD17318Q2 Top View Figure 3-1 Top View
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5V) 6.0 nC
Qgd Gate Charge Gate-to-Drain 1.3 nC
RDS(on) Drain-to-Source On-Resistance VGS = 2.5V 20 mΩ
VGS = 4.5V 13.9
VGS = 8V 12.6
VGS(th) Threshold Voltage 0.9 V
Device Information(1)
PART NUMBERQTYMEDIAPACKAGESHIP
CSD17318Q230007 Inch ReelSON
2.00mm × 2.00mm
Plastic Package		Tape and Reel
CSD17318Q2T250
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°CVALUEUNIT
VDSDrain-to-Source Voltage30V
VGSGate-to-Source Voltage±10V
IDContinuous Drain Current (Package Limited)21.5A
Continuous Drain Current (Silicon Limited), TC = 25°C25
Continuous Drain Current(1)10
IDMPulsed Drain Current, TA = 25°C(2)68A
PDPower Dissipation(1)2.5W
Power Dissipation, TC = 25°C16
TJ,
TSTG		Operating Junction,
Storage Temperature		–55 to 150°C
EASAvalanche Energy, Single Pulse,
ID = 12.4A, L = 0.1mH, RG = 25Ω		7.7mJ
(1) Typical RθJA = 55°C/W on a 1in2, 2oz Cu pad on a
0.06in thick FR4 PCB.
(2) Max RθJC = 7°C/W, pulse duration ≤ 100μs, duty cycle ≤ 1%.
CSD17318Q2 On-State Resistance vs Gate to Source Voltage On-State Resistance vs Gate to Source Voltage
CSD17318Q2 Gate Charge Gate Charge