SLUAAT7 January   2024 BQ25672 , BQ25790 , BQ25792 , BQ25798

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2IRMS Discharge Current
  6. 3External Battery FET
  7. 4Charger With PG and or Host GPIO
  8. 5Buck-only Charger
  9. 6Boosting Charger
  10. 7Summary
  11. 8References

Charger With PG and or Host GPIO

If the charger has an open drain power good (PG) pin or the host has an available GPIO pin, turning on the external battery PFET, Q1, only requires a low cost NFET, Q2, like 2N7002. Alternatively, a host GPIO can be used or diode OR’d with /PG to also drive Q2’s gate.

GUID-20231211-SS0I-LDBF-CNXZ-JJFX836SGPSM-low.svg Figure 4-1 Implementation Using Charger's PG Pin and or Host GPIO Pin

If the maximum SYS voltage [V(SYS)max] is higher than Q1’s maximum VGS voltage (VGSmax-Q1), the pull down resistor RPD can be sized, using the equations below, to protect Q1. These resistors eliminate the need for a Zener diode clamp in case V(SYS)max is greater than VGSmax-Q1.

Equation 2. V G S ( M A X ) - Q 1   > R P U R P U + R P D × V S Y S
Equation 3. V P U - 0.6 V - V G S t h ( M A X ) - Q 2   > R P D R P U + R P D × V S Y S

If V(SYS)max is not higher then VSGmax-Q1, RPD can be zero ohms.