SLUK023A February   2019  – June 2024 UC1825B-SP

 

  1.   1
  2.   UC1825B-SP total ionizing dose (TID) radiation report
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Unbiased
      2. 2.3.2 Biased
    4. 2.4 Test Configuration and Conditions
  6. 3TID Characterization Results
    1. 3.1 Device Spec Table
  7. 4Applicable and Reference Documents
    1. 4.1 Applicable Documents
    2. 4.2 Reference Documents
  8.   LDR TID Report
  9.   B Revision History

2.4 Test Configuration and Conditions

A step-stress (3krad, 10krad, 30 krad, and 45krad) test method is used to determine the TID hardness level. That is, after a predetermined TID level is reached, an electrical test is performed on a given sample of parts to verify that the units are within specified SMD electrical test limits. MIL-STD-883, Test Method 1019.9, Condition D is used in this case. If this passes, then the wafer lot can be certified as an RHA wafer lot.

Table 2-1 lists the samples used during the RHA characterization.

Table 2-1 LDR = 10mrad (Si)/sec Device and Exposure Information
TOTAL SAMPLES: 10 PER DOSE RATE (5 BIASED + 5 UNBIASED)
WAFER 1 - UNIT NUMBER
3krad (Si)10krad (Si)30krad (Si)50krad (Si)100krad (Si)
BiasedBiasedBiasedBiasedBiased
N/A173, 176, 179, 180, 181182, 183, 184, 185,186187,192, 193, 195, 196210, 211, 214, 220, 228
3krad (Si)10krad (Si)30krad (Si)50krad (Si)100krad (Si)
UnbiasedUnbiasedUnbiasedUnbiasedUnbiased
42, 43, 47, 50, 5354, 55, 56, 57, 5861, 62, 63, 65, 6769, 70, 72, 73, 7486, 87, 89, 91, 92, 93, 95, 97, 99, 100, 102, 103, 104, 106, 108, 109, 153, 154, 155, 156, 157, 158