SLUS593J December   2003  – June 2022 TPS40054 , TPS40055 , TPS40057

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Recommended Operating Conditions
    3. 6.3 Thermal Information
    4. 6.4 Electrical Characteristics
    5. 6.5 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Setting the Switching Frequency (Programming the Clock Oscillator)
      2. 7.3.2 Programming The Ramp Generator Circuit
      3. 7.3.3 UVLO Operation
      4. 7.3.4 BP5 and BP10 Internal Voltage Regulators
      5. 7.3.5 Programming Soft Start
      6. 7.3.6 Programming Current Limit
      7. 7.3.7 Synchronizing to an External Supply
      8. 7.3.8 Loop Compensation
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Selecting the Inductor Value
      2. 8.1.2 Calculating the Output Capacitance
      3. 8.1.3 Calculating the Boost and BP10 Bypass Capacitor
      4. 8.1.4 DV-DT Induced Turn-On
      5. 8.1.5 High-Side MOSFET Power Dissipation
      6. 8.1.6 Synchronous Rectifier MOSFET Power Dissipation
      7. 8.1.7 TPS4005x Power Dissipation
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Calculate Maximum and Minimum Duty Cycles
        2. 8.2.2.2  Select Switching Frequency
        3. 8.2.2.3  Select ΔI
        4. 8.2.2.4  Calculate the High-Side MOSFET Power Losses
        5. 8.2.2.5  Calculate Synchronous Rectifier Losses
        6. 8.2.2.6  Calculate the Inductor Value
        7. 8.2.2.7  Set the Switching Frequency
        8. 8.2.2.8  Program the Ramp Generator Circuit
        9. 8.2.2.9  Calculate the Output Capacitance (CO)
        10. 8.2.2.10 Calculate the Soft-Start Capacitor (CSS/SD)
        11. 8.2.2.11 Calculate the Current Limit Resistor (RILIM)
        12. 8.2.2.12 Calculate Loop Compensation Values
        13. 8.2.2.13 Calculate the Boost and BP10V Bypass Capacitance
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 MOSFET Packaging
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

8.1.5 High-Side MOSFET Power Dissipation

The power dissipated in the external high-side MOSFET is comprised of conduction and switching losses. The conduction losses are a function of the IRMS current through the MOSFET and the RDS(on) of the MOSFET. The high-side MOSFET conduction losses are defined by Equation 33.

Equation 37. GUID-F44CB25C-2CFC-49B6-995E-5C424DA53840-low.gif

where

  • TCR is the temperature coefficient of the MOSFET RDS(on).

The TCR varies depending on MOSFET technology and manufacturer, but typically ranges between 3500 ppm/°C and 7000 ppm/°C.

The IRMS current for the high-side MOSFET is described in Equation 34.

Equation 34. GUID-092D430D-0FA9-4778-A81A-56E75BEC069E-low.gif

The switching losses for the high-side MOSFET are described in Equation 35.

Equation 35. GUID-F54A3EBE-7BF0-4635-AAE9-346A9F025A13-low.gif

where

  • IO is the DC output current.
  • tSW is the switching rise time, typically < 20 ns.
  • fSW is the switching frequency.

Typical switching waveforms are shown in Figure 8-1.

GUID-9CA01A42-BFF4-443B-A421-DB3AB2CEA87E-low.gif Figure 8-1 Inductor Current and SW Node Waveforms

The maximum allowable power dissipation in the MOSFET is determined by Equation 36.

Equation 36. GUID-1D883C52-9ABB-4179-B26B-E31B5C55ABCA-low.gif

where

  • PT = PCOND + PSW(fsw) (W).
  • θJA is the package thermal impedance.