SLUSCD1C June   2017  – November 2018 TPS2373

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  APD Auxiliary Power Detect
      2. 7.3.2  PG Power Good (Converter Enable) Pin Interface
      3. 7.3.3  CLSA and CLSB Classification
      4. 7.3.4  DEN Detection and Enable
      5. 7.3.5  Internal Pass MOSFET
      6. 7.3.6  TPH, TPL and BT PSE Type Indicators
      7. 7.3.7  VC_IN, VC_OUT, UVLO_SEL, and Advanced PWM Startup
      8. 7.3.8  AMPS_CTL, MPS_DUTY and Automatic MPS
      9. 7.3.9  VDD Supply Voltage
      10. 7.3.10 VSS
      11. 7.3.11 Exposed Thermal PAD
    4. 7.4 Device Functional Modes
      1. 7.4.1  PoE Overview
      2. 7.4.2  Threshold Voltages
      3. 7.4.3  PoE Startup Sequence
      4. 7.4.4  Detection
      5. 7.4.5  Hardware Classification
      6. 7.4.6  Inrush and Startup
      7. 7.4.7  Maintain Power Signature
      8. 7.4.8  Advanced Startup and Converter Operation
      9. 7.4.9  PD Hotswap Operation
      10. 7.4.10 Startup and Power Management, PG and TPH, TPL, BT
      11. 7.4.11 Adapter ORing
      12. 7.4.12 Using DEN to Disable PoE
      13. 7.4.13 ORing Challenges
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Requirements
        1. 8.2.2.1  Input Bridges and Schottky Diodes
        2. 8.2.2.2  Protection, D1
        3. 8.2.2.3  Capacitor, C1
        4. 8.2.2.4  Detection Resistor, RDEN
        5. 8.2.2.5  Classification Resistors, RCLSA and RCLSB
        6. 8.2.2.6  APD Pin Divider Network RAPD1, RAPD2
        7. 8.2.2.7  Opto-isolators for TPH, TPL and BT
        8. 8.2.2.8  VC Input and Output, CVCIN and CVCOUT
        9. 8.2.2.9  UVLO Select, UVLO_SEL
        10. 8.2.2.10 Automatic MPS and MPS Duty Cycle, RMPS and RMPS_DUTY
        11. 8.2.2.11 Internal Voltage Reference, RREF
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 EMI Containment
    4. 10.4 Thermal Considerations and OTSD
    5. 10.5 ESD
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

8.2.2.1 Input Bridges and Schottky Diodes

Using Schottky diodes instead of PN junction diodes for the PoE input bridges will reduce the power dissipation in these devices by about 30%. There are, however, some things to consider when using them. The IEEE standard specifies a maximum backfeed voltage of 2.8 V. A 100-kΩ resistor is placed between the unpowered pairs and the voltage is measured across the resistor. Schottky diodes often have a higher reverse leakage current than PN diodes, making this a harder requirement to meet. To compensate, use conservative design for diode operating temperature, select lower-leakage devices where possible, and match leakage and temperatures by using packaged bridges.

Schottky diode leakage currents and lower dynamic resistances can impact the detection signature. Setting reasonable expectations for the temperature range over which the detection signature is accurate is the simplest solution. Increasing RDET slightly may also help meet the requirement.

Schottky diodes have proven less robust to the stresses of ESD transients than PN junction diodes. After exposure to ESD, Schottky diodes may become shorted or leak. Take care to provide adequate protection in line with the exposure levels. This protection may be as simple as ferrite beads and capacitors.

As a general recommendation, use 3-A to 5-A, 100-V rated discrete or bridge diodes for the input rectifiers.

Many high power PoE PD designs require the need for an active FET bridge recitifier in high efficiency applications. An example of an active FET bridge rectifier design can be found in the TPS2373-4EVM-758 User's Guide.