SLUSCO9A September   2016  – October 2016 TPS254900-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  FAULT Response
      2. 8.3.2  Cable Compensation
        1. 8.3.2.1 Design Procedure
      3. 8.3.3  D+ and D- Protection
      4. 8.3.4  VBUS OVP Protection
      5. 8.3.5  Output and D+ or D- Discharge
      6. 8.3.6  Port Power Management (PPM)
        1. 8.3.6.1 Benefits of PPM
        2. 8.3.6.2 PPM Details
        3. 8.3.6.3 Implementing PPM in a System With Two Charging Ports (CDP and SDP1)
      7. 8.3.7  Overcurrent Protection
      8. 8.3.8  Undervoltage Lockout
      9. 8.3.9  Thermal Sensing
      10. 8.3.10 Current-Limit Setting
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device Truth Table (TT)
      2. 8.4.2 USB BC1.2 Specification Overview
      3. 8.4.3 Standard Downstream Port (SDP) Mode — USB 2.0 and USB 3.0
      4. 8.4.4 Charging Downstream Port (CDP) Mode
      5. 8.4.5 Client Mode
      6. 8.4.6 High-Bandwidth Data-Line Switch
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Capacitance
        2. 9.2.2.2 Output Capacitance
        3. 9.2.2.3 BIAS Capacitance
        4. 9.2.2.4 Output and BIAS TVS
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

12 Device and Documentation Support

12.1 Device Support

12.1.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

12.2 Documentation Support

12.2.1 Related Documentation

High Speed USB Platform Design Guidelines, Intel

12.3 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

12.4 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

12.5 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

12.6 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

12.7 Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.