SLUSES3B October   2023  – July 2024 UCC25660

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Power Proportional Control
        1. 7.3.1.1 Voltage Feedforward
      2. 7.3.2 VCR Synthesizer
      3. 7.3.3 Feedback Chain (Control Input)
      4. 7.3.4 Adaptive Dead-Time
      5. 7.3.5 Input Voltage Sensing
        1. 7.3.5.1 Brown in and Brown out Tresholds and Options
        2. 7.3.5.2 Output OVP and External OTP
      6. 7.3.6 Resonant Tank Current Sensing
    4. 7.4 Protections
      1. 7.4.1 Zero Current Switching (ZCS) Protection
      2. 7.4.2 Minimum Current Turn-off During Soft Start
      3. 7.4.3 Cycle by Cycle Current Limit and Short Circuit Protection
      4. 7.4.4 Overload (OLP) Protection
      5. 7.4.5 VCC OVP Protection
    5. 7.5 Device Functional Modes
      1. 7.5.1 Startup
        1. 7.5.1.1 With HV Startup
        2. 7.5.1.2 Without HV Startup
      2. 7.5.2 Soft Start Ramp
        1. 7.5.2.1 Startup Transition to Regulation
      3. 7.5.3 Light Load Management
        1. 7.5.3.1 Operating Modes (Burst Pattern)
        2. 7.5.3.2 Mode Transition Management
        3. 7.5.3.3 Burst Mode Threshold Programming
        4. 7.5.3.4 PFC On/Off
      4. 7.5.4 X-Capacitor Discharge
        1. 7.5.4.1 Detecting Through HV Pin Only
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  LLC Power Stage Requirements
        2. 8.2.2.2  LLC Gain Range
        3. 8.2.2.3  Select Ln and Qe
        4. 8.2.2.4  Determine Equivalent Load Resistance
        5. 8.2.2.5  Determine Component Parameters for LLC Resonant Circuit
        6. 8.2.2.6  LLC Primary-Side Currents
        7. 8.2.2.7  LLC Secondary-Side Currents
        8. 8.2.2.8  LLC Transformer
        9. 8.2.2.9  LLC Resonant Inductor
        10. 8.2.2.10 LLC Resonant Capacitor
        11. 8.2.2.11 LLC Primary-Side MOSFETs
        12. 8.2.2.12 Design Considerations for Adaptive Dead-Time
        13. 8.2.2.13 LLC Rectifier Diodes
        14. 8.2.2.14 LLC Output Capacitors
        15. 8.2.2.15 HV Pin Series Resistors
        16. 8.2.2.16 BLK Pin Voltage Divider
        17. 8.2.2.17 ISNS Pin Differentiator
        18. 8.2.2.18 TSET Pin
        19. 8.2.2.19 OVP/OTP Pin
        20. 8.2.2.20 Burst Mode Programming
        21. 8.2.2.21 Application Curves
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 VCCP Pin Capacitor
      2. 8.3.2 Boot Capacitor
      3. 8.3.3 V5P Pin Capacitor
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
        1. 8.4.2.1 Schematics
        2. 8.4.2.2 Schematics
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

8.2.2.12 Design Considerations for Adaptive Dead-Time

After the resonant tank is designed and the primary side MOSFET is selected, the ZVS operation of the converter needs to be double checked. ZVS can only be achieved when there is enough current left in the resonant inductor at the gate turn off edge to discharge the switch node. UC256604 implements adaptive dead-time based on the slewing of the switch node. The slew detection circuit has a detection range of 0.1V/ns to 200V/ns.

To check the ZVS operation, a series of time domain simulations are conducted, and the resonant current at the gate turn off edges are captured. An example plot is shown below:

UCC25660 Adaptive Dead-TimeFigure 8-1 Adaptive Dead-Time

The figure above assumes the maximum switching frequency occurs at 5% load, and system starts to burst at 5% load.

From this plot, the minimum resonant current left in the tank is Imin = 0.8A in the interested operation range. In order to calculate the slew rate, the primary side switch node parasitic capacitance must be known. This value can be estimated from the MOSFET datasheet. In this case, Cswitchnode = 400pF. The minimum slew rate is given by:

Equation 43. UCC25660

This is larger than 0.1V/ns minimum detectable slew rate.