SLUSES3B October   2023  – July 2024 UCC25660

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Power Proportional Control
        1. 7.3.1.1 Voltage Feedforward
      2. 7.3.2 VCR Synthesizer
      3. 7.3.3 Feedback Chain (Control Input)
      4. 7.3.4 Adaptive Dead-Time
      5. 7.3.5 Input Voltage Sensing
        1. 7.3.5.1 Brown in and Brown out Tresholds and Options
        2. 7.3.5.2 Output OVP and External OTP
      6. 7.3.6 Resonant Tank Current Sensing
    4. 7.4 Protections
      1. 7.4.1 Zero Current Switching (ZCS) Protection
      2. 7.4.2 Minimum Current Turn-off During Soft Start
      3. 7.4.3 Cycle by Cycle Current Limit and Short Circuit Protection
      4. 7.4.4 Overload (OLP) Protection
      5. 7.4.5 VCC OVP Protection
    5. 7.5 Device Functional Modes
      1. 7.5.1 Startup
        1. 7.5.1.1 With HV Startup
        2. 7.5.1.2 Without HV Startup
      2. 7.5.2 Soft Start Ramp
        1. 7.5.2.1 Startup Transition to Regulation
      3. 7.5.3 Light Load Management
        1. 7.5.3.1 Operating Modes (Burst Pattern)
        2. 7.5.3.2 Mode Transition Management
        3. 7.5.3.3 Burst Mode Threshold Programming
        4. 7.5.3.4 PFC On/Off
      4. 7.5.4 X-Capacitor Discharge
        1. 7.5.4.1 Detecting Through HV Pin Only
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  LLC Power Stage Requirements
        2. 8.2.2.2  LLC Gain Range
        3. 8.2.2.3  Select Ln and Qe
        4. 8.2.2.4  Determine Equivalent Load Resistance
        5. 8.2.2.5  Determine Component Parameters for LLC Resonant Circuit
        6. 8.2.2.6  LLC Primary-Side Currents
        7. 8.2.2.7  LLC Secondary-Side Currents
        8. 8.2.2.8  LLC Transformer
        9. 8.2.2.9  LLC Resonant Inductor
        10. 8.2.2.10 LLC Resonant Capacitor
        11. 8.2.2.11 LLC Primary-Side MOSFETs
        12. 8.2.2.12 Design Considerations for Adaptive Dead-Time
        13. 8.2.2.13 LLC Rectifier Diodes
        14. 8.2.2.14 LLC Output Capacitors
        15. 8.2.2.15 HV Pin Series Resistors
        16. 8.2.2.16 BLK Pin Voltage Divider
        17. 8.2.2.17 ISNS Pin Differentiator
        18. 8.2.2.18 TSET Pin
        19. 8.2.2.19 OVP/OTP Pin
        20. 8.2.2.20 Burst Mode Programming
        21. 8.2.2.21 Application Curves
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 VCCP Pin Capacitor
      2. 8.3.2 Boot Capacitor
      3. 8.3.3 V5P Pin Capacitor
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
        1. 8.4.2.1 Schematics
        2. 8.4.2.2 Schematics
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

8.2.2.3 Select Ln and Qe

LN is the ratio between the magnetizing inductance and the resonant inductance.

Equation 12. UCC25660

QE is the quality factor of the resonant tank.

Equation 13. UCC25660

In this equation, RE is the equivalent load resistance.

Selecting LN and QE values should result in an LLC gain curve, that intersects with MG(min) and MG(max) traces. The peak gain of the resulting curve should be larger than MG(max). Details of how to select LN and QE are not discussed here. They are available in the Design calculator.

In this case, the selected LN and QE values are:

Equation 14. UCC25660
Equation 15. UCC25660