SLUSF82B January   2024  – November 2024 LMG3100R017 , LMG3100R044

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay and Mismatch Measurement
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Control Inputs
      2. 7.3.2 Start-up and UVLO
      3. 7.3.3 Bootstrap Supply Voltage Clamping
      4. 7.3.4 Level Shift
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VCC Bypass Capacitor
        2. 8.2.2.2 Bootstrap Capacitor
        3. 8.2.2.3 Slew Rate Control
        4. 8.2.2.4 Use With Analog Controllers
        5. 8.2.2.5 Power Dissipation
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

7.3 Feature Description

The LMG3100 device brings ease of designing high power density boards without the need for underfill while maintaining creepage and clearance requirements. Co-packaging the GaN FET with the driver ensures minimized common source inductance. This minimized inductance has a significant performance impact on hard-switched topologies.

The built-in bootstrap circuit with clamp prevents the high-side gate drive from exceeding the GaN FETs maximum gate-to-source voltage (Vgs) without any additional external circuitry. The built-in driver has an undervoltage lockout (UVLO) on the VCC and bootstrap (HB-HS) rails. When the VCC voltage is below the UVLO threshold voltage, the device ignores both the HI and LI signals to prevent the GaN FETs from being partially turned on. Below UVLO, if there is sufficient voltage (VVCC > 2.5 V), the driver actively pulls the high-side and low-side gate driver output low. The UVLO threshold hysteresis of 200 mV prevents chattering and unwanted turnon due to voltage spikes. Use an external VCC bypass capacitor with a value of 1 µF or higher. TI recommends a size of 0402 to minimize trace length to the pin. Place the bypass and bootstrap capacitors as close as possible to the device to minimize parasitic inductance.