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The TPSM8290x (TPSM82903, TPSM82902, TPSM82901) family is the next generation of 17-V, low Iq, high efficiency, and flexible synchronous step-down DC-DC converter MicroSiP™ module that is improved upon the previous family TPS821x0 (TPS82130, TPS82140, TPS82150). Table 1-1 shows the key features of each product and the improvements on the latest generation family. Each improved feature contributes to the leaps forward in the family. In turn, the improved device, a small part of a design, contributes to ground-breaking advancements in technology. This application report provides a comparison between these two device families, as well as an explanation of how the changes benefit the user more than the previous version.
| Features | TPS82130 | TPSM8290x | Improvements |
|---|---|---|---|
| VOUT | 0.9 V to 6 V | 0.4 V to 5.5 V | TPSM82903 supports lower Vout down to 400 mV. |
| Typical quiescent current IQ | 20uA | 4uA | Lower IQ, longer battery life. See Section 5.1. |
| FB accuracy (Full Temperature range) | 1.8% | 0.9% | Tighter VREF accuracy. TPSM82903 also has VSET option that removes the requirements for external feedback resistors and improves that total system accuracy. See Section 5.2. |
| Package size/Total solution size | 3.0 mmx2.8 mm MicroSiPTM /29mm2 | 3.0 mmx2.8 mm MicroSiPTM/25mm2 | Both device use the same package. The TPSM82903 has VSET option that can be used to save the external feedback resistors. Also the Softstart capacitor is optional. See Section 3.1. |
| Smart configuration | No | Yes | Fewer external components needed to configure device. See Section 3.2. |
| Recommended Junction Temperature | -40°C to 110°C | -40°C to 125°C | Supports higher Tj up to 125°C. See Section 4.1. |
| Switching Frequency | 2.5 MHz | 2.5 MHz and 1 MHz | Provides Adjustable switching frequency. See Section 4.3. |
| RDS(ON) | 120 mΩ high side/50 mΩ low side | 62 mΩ high side/22 mΩ low side | Less power loss and better thermals. See Section 4.3 |
| Efficiency (12 Vin, 1.2 Vo, 3 A) | 71.5% | 76.5% | Improved efficiency. TPS82903 offers 1MHz Fsw, in addition to improved RDS(ON). See Section 4.3. |
| Automatic Efficiency Enhancement (AEE) | No | Yes | High efficiency for varying duty cycles. See Section 4.2. |
| Capacitive discharge | Using PG | Using Smart Config | Achieved internally when selected. See Section 5.3. |
| Mode | Supports Auto PFM/PWM only | Supports both Auto PFM/PWM and FPWM | Forced PWM mode is offered in the TPSM8290x in addition to Auto PFM/PWM. See Section 4.4. |
| VSET | No | Yes | This allows for internal divider that has lower BOM count and better overs systems accuracy. See Section 3.3. |
Power density is a term created to describe the power output of a device compared to its size. This is especially important in space constrained applications, or high functionality applications. These applications are mainly concerned with the space on the XY board area when talking about power density, but the Z (height) dimension can also be taken into consideration for total volume if desired. By shrinking the solution area, increasing the power output under similar conditions, or a combination of the two, the power density is positively impacted. As an example, comparing the 3-A rated parts in a case with 12 V on the input, 1.2 V on the output and in an ambient temperature of 65°C, the TPM8290x is able to give the full 3-A load for a power density of 110mA/mm2. The TPS82130 provides 2.1 A for a power density of 72 mA/mm2 due to more power losses in the device and the limited recommended junction temperature of 110°C vs 125°C. Section 3 provides additional detail of how the total solution size went from 29mm2 for TPS82130 to a solution size of 25mm2 in TPSM82903. Section 4 describes how efficiency and thermals impact how much power is able to get out of a part.