SLVAFF0 September 2022 TPS25947 , TPS2597 , TPS25981 , TPS25982 , TPS25985
Stress event | Sequence of events | Probable SOA region to violate | Protection Scheme | Test Waveforms For TPS2597 |
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Startup | High voltage drop and inrush current ->high power dissipation->FET junction temperature rises and reaches TSD threshold -> TSD scheme turns off eFuse | Thermal and electro-thermal SOA | Thermal shutdown and proprietary protection | Figure 3-2 |
Power up into short circuit | Enable eFuse-> starts into current limit-> very high power dissipation due to high VDS-> additional proprietary layer of thermal protection ensures that FET will not enter into thermal instability region by turning off FET prior. | Electrothermal, thermal and electrical SOA | Proprietary protection, thermal shutdown and current limit | Figure 3-3 As as shown in Figure 3-3 that since Vds stress is high as compared to Figure 3-4 for same current limit setting of 8 A, time for eFuse to shutdown is lower here. |
Overload during steady state | eFuse limits the current first->the output voltage drops ->increased power dissipation in the integrated FET ->rise in junction temperature->Thermal shutdown scheme takes care of FET SOA here by turning off FET when temperature reaches TSD threshold. | Electrical and thermal SOA | Current limit and thermal shutdown | Figure 3-4 |
Hard short circuit during steady state | eFuse performs a fast-trip within 1 us thus not letting high current build inside FET and letting the eFuse operate in SOA. | Electrical and thermal SOA | Fast-trip | Figure 3-5 |