SLVK099B March   2022  – September 2023 TPS7H5001-SP , TPS7H5002-SP , TPS7H5003-SP , TPS7H5004-SP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-Up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
    1. 8.1 System Level Implications
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B References
  16.   C Revision History

8.1 System Level Implications

To promote a better understanding of the above SET results, this section will look to dissect the results from a system level point of view. One such system level observation is the difference between OUTX and SRX transients in that the OUTX transients have a higher focus than the SRX transients. This is because the primary output of the device has a greater implication on the system as a whole than the synchronous rectifier output does. A second system level observation is that all testing in this report was performed open-loop which is the worst case test-setup for this device. During testing using prototype devices, closed-loop testing was done to validate this idea, the results are presented in the table below.

Table 8-13 Closed-Loop Push-Pull DC-DC Converter at FSW = 1 MHz

The testing was conducted using prototype devices. A specially designed push-pull converter evaluation module (EVM) was developed in order to observe the device behavior in a closed-loop DC-DC converter configuration similar to its intended use case. Please refer to Figures 3-4 and 3-5 for an image of the Push-Pull EVM and its schematic.

  • Ion

LETEFF (MeV·cm2/mg)

FLUX (ions·cm2/mg)

FLUENCE (# ions)

PXIe-5172 Triggering from VOUT at ± ≥ |5|%

PXI 5110 OUTA# ≥ 30%

PXI 5110 OUTA# ≥ 40%PXI 5110 OUTA# ≥ 50%

141Pr

64.7

1.10 x 105

1.01 x 107

0

80

30

  • 0
141Pr

64.7

1.30 x 105

9.94 x 106

0

76

34

  • 0
141Pr

64.7

1.04 x 1059.99 x 106

0

72

38

  • 0
141Pr

75

1.30 x 1053.72 x 106

0

35

17

  • 0
141Pr

75

1.21 x 1059.96 x 106

0

99

57

  • 0
One main thing to note during the closed-loop testing is that there were no VOUT triggers when using a 5% tolerance. This is important with respect to the device's use case since there are no VOUT transient issues at a system level.

For the open-loop test cases, it is important to demonstrate the difference in device behavior across switching frequency. The SET results of the 500 kHz, 1 MHz, and 2 MHz switching frequencies can best be described by the figure below.

This graph shows that as frequency increases the mean cross-section improves for the nominal VIN case.

GUID-20220209-SS0I-10XR-RXFM-RW5J9HPLZWDK-low.jpgFigure 8-28 Mean Cross-Section vs. Frequency at Nominal VIN

The figure shows that as the frequency increases, so does the performance of the device. The mean cross-section decreases from 500 kHz, to 1 MHz, to 2 MHz which correlates with the expected performance of the device at a system level.