SLVK099B March   2022  – September 2023 TPS7H5001-SP , TPS7H5002-SP , TPS7H5003-SP , TPS7H5004-SP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-Up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
    1. 8.1 System Level Implications
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B References
  16.   C Revision History

2 Single-Event Effects (SEE)

The primary concern for the TPS7H500x-SP is the robustness against the destructive single-event effects (DSEE): single-event latch-up (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR). In mixed technologies such as the BiCMOS process used on the TPS7H500x-SP, the CMOS circuitry introduces a potential for SEL susceptibility.

SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts) [1,2]. The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is “latched”) until power is removed, the device is reset, or until the device is destroyed by the high-current state. The TPS7H500x-SP was tested for SEL at the maximum recommended voltage of 14 V. The device exhibited no SEL when heavy-ions with LETEFF = 75 MeV·cm2/mg at flux ≈105 ions/cm2·s, fluences of ≈107 ions/cm2, and a die temperature of 125°C.

The TPS7H500x-SP was evaluated for SEB/SEGR at a maximum voltage of 14 V in the enabled and disabled mode. The device was tested at room temperature with no external thermal control device. During the SEB/SEGR testing, not a single current event was observed, demonstrating that the TPS7H500x-SP is SEB/SEGR-free up to LETEFF = 75 MeV·cm2/mg at a flux of ≈105 ions/cm2·s, fluence of ≈107 ions/cm2, and a die temperature of ≈25°C.

The TPS7H500x-SP was characterized for SET at flux of ≈1 × 105 ions/cm2·s, fluence of approximately 1 × 107 ions/cm2, and at room temperature. The TPS7H5001-SP device was characterized at VIN of 4, 12, and 14 V. SET performance was verified over a variety of different operating conditions including: internal and external clock, FSW = 1 and 2 MHz, error amp (in unity gain), and Cross Conduction. For the TPS7H5002/3/4-SP devices, only the 12 V SET performance was tested since the only difference between those devices and the TPS7H5001-SP device is the specific device options. Heavy-ions with LETEFF of 30 to 75 MeV·cm2/mg were used to characterize the transient performance. A total of 10 devices were used for the SET characterization. To see the SET results of the TPS7H500x-SP, see Section 8.