SLVK099B March 2022 – September 2023 TPS7H5001-SP , TPS7H5002-SP , TPS7H5003-SP , TPS7H5004-SP
PRODUCTION DATA
During the SEL testing the device was heated to 125°C by using a TDH35P10R0JE discrete power resistor soldered right under the thermal vias on the bottom layer on the coupon card board. Using a PXIe-4113 SMU, a current of 1.2 A was forced into the power resistor elevating the die temperature to 125°C. The temperature of the die was verified using thermal camera.
The ion species used for the SEL testing was Holmium (165Ho at 15 MeV/nucleon). For 165Ho ion, only the incident angle was used for an LETEFF = 75 MeV·cm2/mg (for more details, see Section 5). Flux of approximately 105 ions/cm2·s and a fluence of approximately 107 ions/cm2 per run was used. Run duration to achieve this fluence was approximately 2 minutes. The six devices (three for TPS7H5001-SP and one each for TPS7H5002/3/4-SP) were powered up and exposed to the heavy-ions using the maximum recommended voltage of 14 V. No SEL events were observed during all three runs, indicating that the TPS7H500X-SP is SEL-free up to 75 MeV·cm2/mg. Table 8-4 shows the SEL test conditions and results. Figure 7-1 shows a plot of the current vs time for run #1.
Run # | Device | Unit # | Ion | LETEFF (MeV·cm2/mg) | Flux (ions·cm2/mg) | Fluence (ions·cm2/mg) | SEL Events |
---|---|---|---|---|---|---|---|
1 | TPS7H5001 | 1 | Ho | 75 | 1.19 × 105 | 1 × 107 | 0 |
2 | TPS7H5001 | 2 | Ho | 75 | 7.26 × 104 | 1 × 107 | 0 |
3 | TPS7H5001 | 3 | Ho | 75 | 1.41 × 105 | 9.97 × 106 | 0 |
73 | TPS7H5002 | 9 | Ho | 75 | 1.12 × 105 | 9.97 × 106 | 0 |
74 | TPS7H5003 | 10 | Ho | 75 | 1.06 × 105 | 9.95 × 106 | 0 |
75 | TPS7H5004 | 11 | Ho | 75 | 1.09 × 105 | 1 × 107 | 0 |
σSEL ≤ 1.23 × 10–7 cm2/ device for LETEFF = 75 MeV·cm2/mg and T = 125°C.