During the SEB/SEGR characterization, the device was tested at room temperature of approximately 25°C. The device was tested under both the enabled and disabled mode. For the SEB-Off test, the device was disabled using the EN-pin by forcing 0V (using CH #1 of a Keysight E36311A PS). During the all SEB/SEGR testing, not a single input current event was observed.

The species used for SEB/SEGR testing were Thulium (¹⁶⁹Tm at 20.3 MeV/nucleon, MSU facility) and Holmium (¹⁶⁵Ho at 15 MeV/nucleon, TAMU facility). For both ions an incident angle of 0° was used to achieve an LET_EFF = 75 MeV·cm²/mg (for more details refer to Ion LET_EFF, Depth, and Range in Silicon). The kinetic energy in the vacuum for ¹⁶⁹Tm is 3.431 GeV and ¹⁶⁵Ho is 2.474 GeV. Flux of 5.08 x 10⁴ to 1.07 x 10⁵ ions/cm²·s and a fluence of approximately 10⁷ ions/cm² per run was used. Run duration to achieve this fluence was between 2-4 minutes. The six units (same as used in SEL testing) were powered up and exposed to the heavy-ions using the maximum recommended input voltage of 14V. No SEB/SEGR current events were observed during the 12 runs, indicating that the TPS7H1121-SP is SEB/SEGR-free up to LET_EFF = 75 MeV·cm²/mg and across the full electrical specifications. Summary of TPS7H1121-SP SEB/SEGR Test Condition and Results shows the SEB/SEGR test conditions and results. Figure 7-3, Figure 7-4, and Figure 7-3 show plots of the current vs time for runs #7, #8, and #11.

Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report, the upper-bound cross-section (using a 95% confidence level) is calculated as:

σ_SEB ≤ 3.07 x 10^-8 cm²/device for LET_EFF = 75 MeV·cm²/mg and T = 25°C.