SLVS728D January   2007  – October 2019 TPS2412 , TPS2413

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application Diagram
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Dissipation Ratings
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Definitions
      2. 8.3.2 TPS2412 vs TPS2413 – MOSFET Control Methods
      3. 8.3.3 N+1 Power Supply – Typical Connection
      4. 8.3.4 Input ORing – Typical Connection
      5. 8.3.5 System Design and Behavior With Transients
      6. 8.3.6 TPS2412 Regulation-Loop Stability
      7. 8.3.7 MOSFET Selection and R(RSET)
      8. 8.3.8 Gate Drive, Charge Pump and C(BYP)
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Recommended Operating Range
    2. 10.2 VDD, BYP, and Powering Options
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

6 Pin Configuration and Functions

PW and D Packages
8-Pins TSSOP and SOIC
Top View
TPS2412 TPS2413 op_lvs728.gif

Pin Functions

PIN I/O DESCRIPTION
NAME NO.
VDD 1 PWR Input power for the gate drive charge pump and internal controls. VDD must be connected to a supply voltage ≥ 3 V.
RSET 2 I Connect a resistor to ground to program the turnoff threshold. Leaving RSET open results in a slightly positive V(A-C) turnoff threshold.
RSVD 3 PWR This pin must be connected to GND.
GND 4 PWR Device ground.
GATE 5 O Connect to the gate of the external MOSFET. Controls the MOSFET to emulate a low forward-voltage diode.
C 6 I Voltage sense input that connects to the simulated diode cathode. Connect to the MOSFET drain in the typical configuration.
A 7 I Voltage sense input that connects to the simulated diode anode. A also serves as the reference for the charge-pump bias supply on BYP. Connect to the MOSFET source in the typical configuration.
BYP 8 I/O Connect a storage capacitor from BYP to A to filter the gate drive supply voltage.