TPS22921, TPS22922, and TPS22922B are small, low rON load switches with controlled turnon. The TPS22921/2/2B contains a P-channel MOSFET that can operate over an input voltage range of 0.9 V to 3.6 V. The switch is controlled by an on/off input (ON), which can interface directly with low-voltage control signals. In TPS22922 and in TPS22922B, a 65-Ω on-chip load resistor is added for output quick discharge when the switch is turned off. The rise time (slew rate) of the device is internally controlled in order to avoid inrush current: TPS22921 and TPS22922 feature a 30-μs rise time, whereas TPS22922B is 200 μs.
TPS22921, TPS22922, and TPS22922B feature low quiescent and shutdown currents and are available in space-saving 6-pin wafer-chip-scale packages DSBGA (WCSP: YZP and YZT with 0.5-mm pitch and YFP with 0.4-mm pitch) which make them ideal for portable electronics. The devices are characterized for operation over the free-air temperature range of –40°C to 85°C.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
TPS22921(1) | YZT | 0.9 mm × 1.4 mm |
YZP | ||
YFP | 0.8 mm × 1.2 mm | |
TPS22922 TPS22922B |
YZP | 0.9 mm × 1.4 mm |
YFP | 0.8 mm × 1.2 mm |
Changes from B Revision (May 2012) to C Revision
Changes from A Revision (December 2008) to B Revision
Changes from * Revision (November 2008) to A Revision
RON AT 1.8 V (TYP) |
RISE TIME (TYP at 1.8 V) |
QUICK OUTPUT DISCHARGE(1) |
MAX OUTPUT CURRENT |
ENABLE | |
---|---|---|---|---|---|
TPS22921 | 33 mΩ | 30 μs | No | 2 A | Active high |
TPS22922 | 33 mΩ | 30 μs | Yes | 2 A | Active high |
TPS22922B | 33 mΩ | 200 μs | Yes | 2 A | Active high |
C | ON | GND |
B | VIN | VOUT |
A | VIN | VOUT |
2 | 1 |
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NO. | NAME | ||
A1 | VOUT | O | Switch output |
A2 | VIN | I | Switch input. Use a bypass capacitor to ground (ceramic) |
B1 | VOUT | O | Switch output |
B2 | VIN | I | Switch input. Use a bypass capacitor to ground (ceramic) |
C1 | GND | – | Ground |
C2 | ON | I | Switch control input, active high. Do not leave floating |
MIN | MAX | UNIT | ||||
---|---|---|---|---|---|---|
VIN | Input voltage | –0.3 | 4 | V | ||
VOUT | Output voltage | VIN + 0.3 | V | |||
VON | Input voltage | –0.3 | 4 | V | ||
P | Power dissipation at TA = 25°C | 0.645 | W | |||
IMAX | Maximum continuous switch current | 2 | A | |||
TA | Operating free-air temperature | –40 | 85 | °C | ||
Tlead | Maximum lead temperature (10-s soldering time) | 300 | °C | |||
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±3000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 | |||
Machine model (MM) | ±300 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN | Input voltage range | 0.9 | 3.6 | V |
VOUT | Output voltage range | VIN | V | |
VIH | High-level input voltage, ON | 0.85 | 3.6 | V |
VIL | Low-level input voltage, ON | 0.4 | V | |
CIN | Input capacitor | 1(1) | µF |
THERMAL METRIC(1) | TPS22921, TPS22922, TPS22922B | TPS22921 | UNIT | ||
---|---|---|---|---|---|
YFP | YZP | YZT | |||
6 PINS | |||||
RθJA | Junction-to-ambient thermal resistance | 125.1 | 131 | 120.7 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 1.4 | 1.3 | 2.1 | |
RθJB | Junction-to-board thermal resistance | 26 | 22.6 | 26.4 | |
ψJT | Junction-to-top characterization parameter | 0.3 | 5.2 | 3.7 | |
ψJB | Junction-to-board characterization parameter | 26 | 22.6 | 26.4 |
PARAMETER | TEST CONDITIONS | TA | MIN | TYP(1) | MAX | UNIT | ||
---|---|---|---|---|---|---|---|---|
IQ | Quiescent current | IOUT = 0 mA | VIN = 1 V | Full | 30 | 120 | nA | |
VIN = 1.8 V | Full | 78 | 235 | |||||
VIN = 3.6 V | Full | 200 | 880 | |||||
IIN(OFF) | OFF-state supply current | VON = GND, OUT = Open |
VIN = 1 V | Full | 10 | 210 | nA | |
VIN = 1.8 V | Full | 35 | 260 | |||||
VIN = 3.6 V | Full | 120 | 700 | |||||
IIN(LEAKAGE) | OFF-state switch current | VON = GND, VOUT = 0 V |
VIN = 1 V | Full | 12 | 140 | nA | |
VIN = 1.8 V | Full | 50 | 230 | |||||
VIN = 3.6 V | Full | 130 | 610 | |||||
rON | ON-state resistance | IOUT = –200 mA | VIN = 3.6 V | 25°C | 14 | 45 | mΩ | |
Full | 50 | |||||||
VIN = 2.5 V | 25°C | 20 | 55 | |||||
Full | 60 | |||||||
VIN = 1.8 V | 25°C | 33 | 65 | |||||
Full | 75 | |||||||
VIN = 1.2 V | 25°C | 67 | 100 | |||||
Full | 120 | |||||||
VIN = 1.1 V | 25°C | 82 | 150 | |||||
Full | 160 | |||||||
VIN = 1 V | 25°C | 116 | 160 | |||||
Full | 170 | |||||||
rPD | Output pulldown resistance | VIN = 3.3 V, VON = 0 V, IOUT = 30 mA (TPS22922 and TPS22922B only) |
25°C | 65 | 120 | Ω | ||
ION | ON input leakage current | VON = 1.1 V to 3.6 V or GND | Full | 25 | nA |
PARAMETER | TEST CONDITIONS | TPS22921 | TPS22922 | TPS22922B | UNIT | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MIN | TYP | MAX | MIN | TYP | MAX | MIN | TYP | MAX | |||||
tON | Turn-ON time | RL = 500 Ω | CL = 0.1 μF | 121 | 121 | 638 | μs | ||||||
CL = 1 μF | 160 | 160 | 712 | ||||||||||
CL = 3 μF | 188 | 188 | 799 | ||||||||||
tOFF | Turn-OFF time | RL = 500 Ω | CL = 0.1 μF | 46 | 40 | 40 | μs | ||||||
CL = 1 μF | 308 | 279 | 279 | ||||||||||
CL = 3 μF | 975 | 807 | 807 | ||||||||||
tr | VOUT rise time | RL = 500 Ω | CL = 0.1 μF | 60 | 60 | 462 | μs | ||||||
CL = 1 μF | 85 | 85 | 465 | ||||||||||
CL = 3 μF | 107 | 107 | 507 | ||||||||||
tf | VOUT fall time | RL = 500 Ω | CL = 0.1 μF | 119 | 51 | 51 | μs | ||||||
CL = 1 μF | 969 | 434 | 434 | ||||||||||
CL = 3 μF | 3174 | 1264 | 1264 |
PARAMETER | TEST CONDITIONS | TPS22921 | TPS22922 | TPS22922B | UNIT | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MIN | TYP | MAX | MIN | TYP | MAX | MIN | TYP | MAX | |||||
tON | Turn-ON time | RL = 500 Ω | CL = 0.1 μF | 105 | 105 | 549 | μs | ||||||
CL = 1 μF | 136 | 136 | 613 | ||||||||||
CL = 3 μF | 157 | 157 | 683 | ||||||||||
tOFF | Turn-OFF time | RL = 500 Ω | CL = 0.1 μF | 46 | 28 | 28 | μs | ||||||
CL = 1 μF | 309 | 186 | 186 | ||||||||||
CL = 3 μF | 983 | 511 | 511 | ||||||||||
tr | VOUT rise time | RL = 500 Ω | CL = 0.1 μF | 51 | 51 | 386 | μs | ||||||
CL = 1 μF | 78 | 78 | 388 | ||||||||||
CL = 3 μF | 88 | 88 | 419 | ||||||||||
tf | VOUT fall time | RL = 500 Ω | CL = 0.1 μF | 121 | 34 | 34 | μs | ||||||
CL = 1 μF | 986 | 306 | 306 | ||||||||||
CL = 3 μF | 3300 | 908 | 908 |
PARAMETER | TEST CONDITIONS | TPS22921 | TPS22922 | TPS22922B | UNIT | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MIN | TYP | MAX | MIN | TYP | MAX | MIN | TYP | MAX | |||||
tON | Turn-ON time | RL = 500 Ω | CL = 0.1 μF | 91 | 93 | 484 | μs | ||||||
CL = 1 μF | 118 | 118 | 540 | ||||||||||
CL = 3 μF | 137 | 137 | 599 | ||||||||||
tOFF | Turn-OFF time | RL = 500 Ω | CL = 0.1 μF | 44 | 21 | 21 | μs | ||||||
CL = 1 μF | 311 | 144 | 144 | ||||||||||
CL = 3 μF | 99 | 383 | 383 | ||||||||||
tr | VOUT rise time | RL = 500 Ω | CL = 0.1 μF | 46 | 46 | 335 | μs | ||||||
CL = 1 μF | 60 | 60 | 336 | ||||||||||
CL = 3 μF | 76 | 76 | 363 | ||||||||||
tf | VOUT fall time | RL = 500 Ω | CL = 0.1 μF | 122 | 29 | 29 | μs | ||||||
CL = 1 μF | 1000 | 224 | 224 | ||||||||||
CL = 3 μF | 3300 | 732 | 732 |
PARAMETER | TEST CONDITIONS | TPS22921 | TPS22922 | TPS22922B | UNIT | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MIN | TYP | MAX | MIN | TYP | MAX | MIN | TYP | MAX | |||||
tON | Turn-ON time | RL = 500 Ω | CL = 0.1 μF | 83 | 83 | 435 | μs | ||||||
CL = 1 μF | 103 | 103 | 485 | ||||||||||
CL = 3 μF | 122 | 122 | 536 | ||||||||||
tOFF | Turn-OFF time | RL = 500 Ω | CL = 0.1 μF | 44 | 17 | 17 | μs | ||||||
CL = 1 μF | 312 | 117 | 117 | ||||||||||
CL = 3 μF | 1000 | 319 | 319 | ||||||||||
tr | VOUT rise time | RL = 500 Ω | CL = 0.1 μF | 41 | 41 | 301 | μs | ||||||
CL = 1 μF | 54 | 54 | 302 | ||||||||||
CL = 3 μF | 67 | 67 | 325 | ||||||||||
tf | VOUT fall time | RL = 500 Ω | CL = 0.1 μF | 123 | 25 | 25 | μs | ||||||
CL = 1 μF | 1000 | 214 | 214 | ||||||||||
CL = 3 μF | 3400 | 632 | 632 |
PARAMETER | TEST CONDITIONS | TPS22921 | TPS22922 | TPS22922B | UNIT | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MIN | TYP | MAX | MIN | TYP | MAX | MIN | TYP | MAX | |||||
tON | Turn-ON time | RL = 500 Ω | CL = 0.1 μF | 54 | 54 | 282 | μs | ||||||
CL = 1 μF | 67 | 67 | 314 | ||||||||||
CL = 3 μF | 78 | 78 | 344 | ||||||||||
tOFF | Turn-OFF time | RL = 500 Ω | CL = 0.1 μF | 41 | 10 | 10 | μs | ||||||
CL = 1 μF | 312 | 67 | 67 | ||||||||||
CL = 3 μF | 1000 | 181 | 181 | ||||||||||
tr | VOUT rise time | RL = 500 Ω | CL = 0.1 μF | 30 | 30 | 200 | μs | ||||||
CL = 1 μF | 37 | 37 | 202 | ||||||||||
CL = 3 μF | 47 | 47 | 219 | ||||||||||
tf | VOUT fall time | RL = 500 Ω | CL = 0.1 μF | 121 | 17 | 17 | μs | ||||||
CL = 1 μF | 1000 | 158 | 158 | ||||||||||
CL = 3 μF | 3450 | 461 | 461 |
PARAMETER | TEST CONDITIONS | TPS22921 | TPS22922 | TPS22922B | UNIT | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MIN | TYP | MAX | MIN | TYP | MAX | MIN | TYP | MAX | |||||
tON | Turn-ON time | RL = 500 Ω | CL = 0.1 μF | 40 | 40 | 211 | μs | ||||||
CL = 1 μF | 50 | 50 | 233 | ||||||||||
CL = 3 μF | 59 | 59 | 256 | ||||||||||
tOFF | Turn-OFF time | RL = 500 Ω | CL = 0.1 μF | 41 | 10 | 10 | μs | ||||||
CL = 1 μF | 316 | 56 | 56 | ||||||||||
CL = 3 μF | 1000 | 153 | 153 | ||||||||||
tr | VOUT rise time | RL = 500 Ω | CL = 0.1 μF | 23 | 23 | 164 | μs | ||||||
CL = 1 μF | 29 | 29 | 165 | ||||||||||
CL = 3 μF | 38 | 38 | 177 | ||||||||||
tf | VOUT fall time | RL = 500 Ω | CL = 0.1 μF | 122 | 16 | 16 | μs | ||||||
CL = 1 μF | 1086 | 147 | 147 | ||||||||||
CL = 3 μF | 3600 | 430 | 430 |
PARAMETER | TEST CONDITIONS | TPS22921 | TPS22922 | TPS22922B | UNIT | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MIN | TYP | MAX | MIN | TYP | MAX | MIN | TYP | MAX | |||||
tON | Turn-ON time | RL = 500 Ω | CL = 0.1 μF | 30 | 30 | 182 | μs | ||||||
CL = 1 μF | 38 | 38 | 201 | ||||||||||
CL = 3 μF | 45 | 45 | 221 | ||||||||||
tOFF | Turn-OFF time | RL = 500 Ω | CL = 0.1 μF | 40 | 10 | 10 | μs | ||||||
CL = 1 μF | 353 | 51 | 51 | ||||||||||
CL = 3 μF | 1036 | 139 | 139 | ||||||||||
tr | VOUT rise time | RL = 500 Ω | CL = 0.1 μF | 20 | 20 | 149 | μs | ||||||
CL = 1 μF | 25 | 25 | 150 | ||||||||||
CL = 3 μF | 33 | 33 | 161 | ||||||||||
tf | VOUT fall time | RL = 500 Ω | CL = 0.1 μF | 104 | 15 | 15 | μs | ||||||
CL = 1 μF | 1030 | 143 | 143 | ||||||||||
CL = 3 μF | 3230 | 419 | 419 |
PARAMETER | TEST CONDITIONS | TPS22921 | TPS22922 | TPS22922B | UNIT | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MIN | TYP | MAX | MIN | TYP | MAX | MIN | TYP | MAX | |||||
tON | Turn-ON time | RL = 500 Ω | CL = 0.1 μF | 30 | 30 | 159 | μs | ||||||
CL = 1 μF | 38 | 38 | 175 | ||||||||||
CL = 3 μF | 45 | 45 | 193 | ||||||||||
tOFF | Turn-OFF time | RL = 500 Ω | CL = 0.1 μF | 42 | 10 | 10 | μs | ||||||
CL = 1 μF | 310 | 51 | 51 | ||||||||||
CL = 3 μF | 988 | 139 | 139 | ||||||||||
tr | VOUT rise time | RL = 500 Ω | CL = 0.1 μF | 20 | 20 | 137 | μs | ||||||
CL = 1 μF | 25 | 25 | 138 | ||||||||||
CL = 3 μF | 33 | 33 | 148 | ||||||||||
tf | VOUT fall time | RL = 500 Ω | CL = 0.1 μF | 120 | 15 | 15 | μs | ||||||
CL = 1 μF | 1100 | 143 | 143 | ||||||||||
CL = 3 μF | 3600 | 419 | 419 |
The TPS2292x is a single-channel, 2-A load switch in a small, space-saving CSP-6 package. These devices implement a P-channel MOSFET to provide a low ON-resistance for a low voltage drop across the device. A controlled rise time is used in applications to limit the inrush current.
The ON pin controls the state of the switch. Activating ON continuously holds the switch in the on state. ON is active high and has a low threshold making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard GPIO logic threshold, and it can be used with any microcontroller with 1.2-V, 1.8-V, 2.5-V or 3.3-V GPIOs.
The TPS22922 and TPS22922B includes the Quick Output Discharge (QOD) feature. When the switch is disabled, a discharge resistance with a typical value of 65 Ω is connected between the output and ground. This resistance pulls down the output and prevents it from floating when the device is disabled.
Table 1 lists the VOUT pin connections to for a particular device as determined by the ON pin.
ON | TPS22921 | TPS22922/2B |
---|---|---|
L | Open | GND |
H | VIN | VIN |
NOTE
Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.
To limit the voltage drop on the input supply caused by transient inrush currents when the switch turns on into a discharged load capacitor, a capacitor must be placed between VIN and GND. A 1-μF ceramic capacitor, CIN, placed close to the pins is usually sufficient. Higher values of CIN can be used to further reduce the voltage drop during higher current application. When switching a heavy load, TI recommends using an input capacitor about 10 or more times higher than the output capacitor in order to avoid any supply drop.
Because of the integral body diode in the PMOS switch, a CIN greater than CL is highly recommended. A CL greater than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current flow through the body diode from VOUT to VIN.
DESIGN PARAMETER | EXAMPLE VALUE |
---|---|
VIN | 1.8 V |
CL | 4.7 µF |
Load current | 2 A |
Ambient Temperature | 25 °C |
Maximum inrush current | 200 mA |
When the switch is enabled, the output capacitors must be charged up from 0 V to the set value (1.8 V in this example). This charge arrives in the form of inrush current. Inrush current can be calculated using the following equation:
where
The TPS22921/2/2B offers a controlled rise time for minimizing inrush current. This device can be selected based upon the minimum acceptable rise time which can be calculated using the design requirements and the inrush current equation. An output capacitance of 4.7 µF will be used because the amount of inrush current increases with output capacitance:
where
To ensure an inrush current of less than 200 mA, a device with a rise time greater than 42.3 µs must be used. The TPS22922B has a typical rise time of 200 µs at 1.8 V which meets the above design requirements. The TPS22921/2 has a faster rise time of 30 µs at 1.8 V, and this would result in an inrush current larger than desired.
The voltage drop from VIN to VOUT is determined by the ON-resistance of the device and the load current. RON can be found in Electrical Characteristics and is dependent on temperature. When the value of RON is found, the following equation can be used to calculate the voltage drop across the device:
where
At VIN = 1.8 V, the TPS22921/2/2B has an RON value of 33 mΩ. Using this value and the defined load current, the above equation can be evaluated:
where
Therefore, the voltage drop across the device will be 66 mV.
Figure 54 shows the expected voltage drop across the device for different load currents and input voltages.
The device is designed to operate with a VIN range of 0.9 V to 3.6 V. This supply must be well regulated and placed as close to the device terminals as possible. It must also be able to withstand all transient and load currents, using a recommended input capacitance of 1 µF if necessary. If the supply is located more than a few inches from the device terminals, additional bulk capacitance may be required in addition to the ceramic bypass capacitors. If additional bulk capacitance is required, an electrolytic, tantalum, or ceramic capacitor of 10 µF may be sufficient.