SLVS861F august   2008  – june 2020 TPS40210-Q1 , TPS40211-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     4
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Minimum On-Time and Off-Time Considerations
      2. 7.3.2  Current Sense and Overcurrent
      3. 7.3.3  Current Sense and Subharmonic Instability
      4. 7.3.4  Current Sense Filtering
      5. 7.3.5  Soft Start
      6. 7.3.6  BP Regulator
      7. 7.3.7  Shutdown (DIS/ EN Pin)
      8. 7.3.8  Control Loop Considerations
      9. 7.3.9  Gate Drive Circuit
      10. 7.3.10 TPS40211-Q1
    4. 7.4 Device Functional Modes
      1. 7.4.1 Setting the Oscillator Frequency
      2. 7.4.2 Synchronizing the Oscillator
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Duty Cycle Estimation
        2. 8.2.2.2  Inductor Selection
        3. 8.2.2.3  Rectifier Diode Selection
        4. 8.2.2.4  Output Capacitor Selection
        5. 8.2.2.5  Input Capacitor Selection
        6. 8.2.2.6  Current Sense and Current Limit
        7. 8.2.2.7  Current Sense Filter
        8. 8.2.2.8  Switching MOSFET Selection
        9. 8.2.2.9  Feedback Divider Resistors
        10. 8.2.2.10 Error Amplifier Compensation
        11. 8.2.2.11 R-C Oscillator
        12. 8.2.2.12 Soft-Start Capacitor
        13. 8.2.2.13 Regulator Bypass
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Related Links
    4. 11.4 Receiving Notification of Documentation Updates
    5. 11.5 Support Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1.     69

11.7 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.