SLVSCA0C October 2013 – September 2016 TPS7B4250-Q1
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Input voltage, unregulated input, VIN(2)(3) | –20 | 45 | V | ||
Output voltage, regulated output, VOUT | –1 | 22 | V | ||
Adjust input and enable input voltage, ADJ/EN(2)(3) | –0.3 | 22 | V | ||
ADJ Voltage minus input voltage (ADJ–VIN), VIN > 0 V | 7 | V | |||
Operating junction temperature, TJ | –40 | 150 | °C | ||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±4000 | V |
Charged-device model (CDM), per AEC Q100-011 | ±1000 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN | Unregulated input | 4 | 40 | V |
VOUT | regulated output | 1.5 | 18 | V |
ADJ/EN | Adjust input and enable input voltage | 1.5 | 18 | V |
ADJ–VIN | ADJ voltage minus input voltage | 5 | V | |
COUT | Output capacitor requirements(1) | 1 | 50 | µF |
ESRCOUT | Output ESR requirements | 0.001 | 20 | Ω |
TJ | Operating junction temperature | –40 | 150 | °C |
THERMAL METRIC(2)(1) | TPS7B4250-Q1 | UNIT | |
---|---|---|---|
DBV (SOT-23) | |||
5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 171.7 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 81.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 31.7 | °C/W |
ψJT | Junction-to-top characterization parameter | 4.5 | °C/W |
ψJB | Junction-to-board characterization parameter | 31.2 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VUVLO | VIN undervoltage detection | Ramp up VI until the output turns on, VADJ = 1.5 V | 3.65 | V | ||
Ramp down VI until the output turns off, VADJ = 1.5 V | 3 | |||||
ΔVO | Output-voltage tracking accuracy | IO = 100 µA to 1 mA, VI = 4 V to 40 V, 1.5 V < VADJ < VI – 0.3 V | –4 | 4 | mV | |
IO = 1 mA to 50 mA, VI = 4 V to 40 V, 1.5 V < VADJ < VI – 1.5 V | –5 | 5 | ||||
ΔVO(ΔIL) | Load regulation steady-state | IO = 1 mA to 30 mA | 4 | mV | ||
ΔVO(ΔVI) | Line regulation steady-state | IO = 10 mA, VI = 6 V to 40 V | 3 | mV | ||
PSRR | Power-supply ripple rejection | Frequency = 100 Hz, Vrip = 0.5 VPP, IO = 5 mA, CO = 2.2 µF | 60 | dB | ||
Vdropout | Dropout voltage, Vdropout = VI – VQ | IO = 10 mA, VI ≥ 4 V(1) | 150 | 265 | mV | |
IO = 50 mA, VI ≥ 4 V(1) | 550 | 1000 | ||||
IL | Output-current limitation | VO short to GND | 100 | 500 | mA | |
IR | Reverse current at VIN | VI = 0 V, VO = 20 V, VADJ = 5 V | –5 | 0 | µA | |
IRN1 | Reverse current at negative input voltage | VI = –20 V, VO = 0 V, VADJ = 5 V | –5 | 0 | µA | |
IRN2 | VI = –20 V, VO = 20 V, VADJ = 5 V | –5 | 0 | |||
TSD | Thermal shutdown temperature | TJ increasing because of power dissipation generated by the IC | 175 | °C | ||
IQ | Current consumption | VADJ < 0.8 V, TA ≤ 85°C(2) | 7.5 | 15 | µA | |
VADJ < 0.8 V, TA ≤ 125°C | 20 | |||||
IO = 0.5 mA, VADJ = 5 V | 40 | 90 | ||||
IO = 30 mA, VADJ = 5 V | 150 | 350 | ||||
IADJ | Adjust-input and enable-input current | VADJ = 5 V | 1 | µA | ||
VADJ,low | Adjust and enable low signal valid | VO = 0 V | 0.8 | V | ||
VADJ,high | Adjust and enable high signal valid | |VO – VADJ| < 5 mV | 1.5 | 18 | V |
VI = VADJ = 4 V | IO = 10 mA | |
VI = 13.5 V | VADJ = 5 V | |
VI = 13.5 V | CO = 2.2 µF | ILOAD = 25 mA |
VADJ = 5 V | ||