SLVSF07F July   2021  – August 2024 TPS7H5001-SP , TPS7H5002-SP , TPS7H5003-SP , TPS7H5004-SP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Device Options
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics: All Devices
    6. 7.6  Electrical Characteristics: TPS7H5001-SP
    7. 7.7  Electrical Characteristics: TPS7H5002-SP
    8. 7.8  Electrical Characteristics: TPS7H5003-SP
    9. 7.9  Electrical Characteristics: TPS7H5004-SP
    10. 7.10 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  VIN and VLDO
      2. 8.3.2  Start-Up
      3. 8.3.3  Enable and Undervoltage Lockout (UVLO)
      4. 8.3.4  Voltage Reference
      5. 8.3.5  Error Amplifier
      6. 8.3.6  Output Voltage Programming
      7. 8.3.7  Soft Start (SS)
      8. 8.3.8  Switching Frequency and External Synchronization
        1. 8.3.8.1 Internal Oscillator Mode
        2. 8.3.8.2 External Synchronization Mode
        3. 8.3.8.3 Primary-Secondary Mode
      9. 8.3.9  Primary Switching Outputs (OUTA/OUTB)
      10. 8.3.10 Synchronous Rectifier Outputs (SRA and SRB)
      11. 8.3.11 Dead Time and Leading Edge Blank Time Programmability (PS, SP, and LEB)
      12. 8.3.12 Pulse Skipping
      13. 8.3.13 Duty Cycle Programmability
      14. 8.3.14 Current Sense and PWM Generation (CS_ILIM)
      15. 8.3.15 Hiccup Mode Operation (HICC)
      16. 8.3.16 External Fault Protection (FAULT)
      17. 8.3.17 Slope Compensation (RSC)
      18. 8.3.18 Frequency Compensation
      19. 8.3.19 Thermal Shutdown
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Switching Frequency
        2. 9.2.2.2  Output Voltage Programming Resistors
        3. 9.2.2.3  Dead Time
        4. 9.2.2.4  Leading Edge Blank Time
        5. 9.2.2.5  Soft-Start Capacitor
        6. 9.2.2.6  Transformer
        7. 9.2.2.7  Main Switching FETs
        8. 9.2.2.8  Synchronous Rectificier FETs
        9. 9.2.2.9  RCD Clamp
        10. 9.2.2.10 Output Inductor
        11. 9.2.2.11 Output Capacitance and Filter
        12. 9.2.2.12 Sense Resistor
        13. 9.2.2.13 Hiccup Capacitor
        14. 9.2.2.14 Frequency Compensation Components
        15. 9.2.2.15 Slope Compensation Resistor
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

9.2.2.7 Main Switching FETs

In the push-pull topology, the switching devices on the primary side will see a voltage that is equal to twice that of the input when the devices are off. As such, the GaN FETs selected should have a voltage rating that 3 times higher than the input voltage. The voltage rating for the GaN FETs was conservatively chosen for the primary side as 170 V for this application based on maximum input voltage of 36 V. This was to account for any transient spikes that were seen during operation. Also ensure that the GaN FETs are properly sized based on the primary current calculations in Section 9.2.2.6.