SLVSFT8F February   2023  – December 2023 TPS7H1111-SEP , TPS7H1111-SP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Options Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Quality Conformance Inspection
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Bias Supply
      2. 8.3.2  Output Voltage Configuration
      3. 8.3.3  Output Voltage Configuration with a Voltage Source
      4. 8.3.4  Enable
      5. 8.3.5  Soft Start and Noise Reduction
      6. 8.3.6  Configurable Power Good
      7. 8.3.7  Current Limit
      8. 8.3.8  Stability
        1. 8.3.8.1 Output Capacitance
        2. 8.3.8.2 Compensation
      9. 8.3.9  Current Sharing
      10. 8.3.10 PSRR
      11. 8.3.11 Noise
      12. 8.3.12 Thermal Shutdown
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Application 1: Set Turn-On Threshold with EN
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Bias Supply
          2. 9.2.1.2.2 Output Voltage Configuration
          3. 9.2.1.2.3 Output Voltage Accuracy
          4. 9.2.1.2.4 Enable Threshold
          5. 9.2.1.2.5 Soft Start and Noise Reduction
          6. 9.2.1.2.6 Configurable Power Good
          7. 9.2.1.2.7 Current Limit
          8. 9.2.1.2.8 Output Capacitor and Ferrite Bead
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Application 2: Parallel Operation
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Current Sharing
        3. 9.2.2.3 Application Results
    3. 9.3 Capacitors Tested
    4. 9.4 TID Effects
    5. 9.5 Power Supply Recommendations
    6. 9.6 Layout
      1. 9.6.1 Layout Guidelines
      2. 9.6.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Third-Party Products Disclaimer
      2. 10.1.2 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

9.2.2.3 Application Results

The offset voltage of each device was measured and determined to be –0.1339 mV for the first device and –0.2131 mV for the second device. Equation 10 and Equation 11 are used to calculate the expected error and are recorded in Table 9-3 for different current values. The current is then measured to compare with the expected error value.

Table 9-3 Current Error
IOUT(total) Expected Error Measured Error
1.156 A 1.37% 1.04%
2.878 A 0.55% 0.07%

As shown in Table 9-3, the measured error is about 1.3x less than expected at 1.156 A and 7.9x less than expected at 2.878 A. This is hypothesized to be at least partially due to the temperature coefficient of VOS. If one device begins sourcing more than half the total current, it will heat up more than the second device. As the device heats, the VOS decreases which causes the device to source less current. This provides a type of negative feedback, therefore ensuring more equal balancing.