SLVSGZ1A May   2024  – July 2024 DRV8161 , DRV8162

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specification
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information 1pkg
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Diagrams
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Gate Drivers
        1. 7.3.1.1 PWM Control Modes
          1. 7.3.1.1.1 2-pin PWM Mode
          2. 7.3.1.1.2 1-pin PWM Mode (preview only)
          3. 7.3.1.1.3 Independent PWM Mode
        2. 7.3.1.2 Gate Drive Architecture
          1. 7.3.1.2.1 Tickle Charge Pump (TCP)
          2. 7.3.1.2.2 Deadtime and Cross-Conduction Prevention (Shoot through protection)
      2. 7.3.2 Pin Diagrams
        1. 7.3.2.1 Four Level Input Pin (CSAGAIN)
        2. 7.3.2.2 Digital output nFAULT (DRV8162, DRV8162L)
        3. 7.3.2.3 Digital InOut nFAULT/nDRVOFF (DRV8161)
        4. 7.3.2.4 Multi-level inputs (IDRIVE1 and IDRIVE2)
        5. 7.3.2.5 Multi-level digital input (VDSLVL)
        6. 7.3.2.6 Multi-level digital input DT/MODE
      3. 7.3.3 Low-Side Current Sense Amplifiers
        1. 7.3.3.1 Bidirectional Current Sense Operation
      4. 7.3.4 Gate Driver Shutdown Sequence (nDRVOFF)
        1. 7.3.4.1 nDRVOFF Diagnostic
      5. 7.3.5 Gate Driver Protective Circuits
        1. 7.3.5.1 GVDD Undervoltage Lockout (GVDD_UV)
        2. 7.3.5.2 MOSFET VDS Overcurrent Protection (VDS_OCP)
        3. 7.3.5.3 Thermal Shutdown (OTSD)
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Typical Application with DRV8161
      2. 8.2.2 Typical Application with DRV8162 and DRV8162L
      3. 8.2.3 External Components
  10. 9 Layout
    1. 9.1 Layout Guidelines
  11. 10Device and Documentation Support
    1. 10.1 Device Support
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Community Resources
    5. 10.5 Trademarks
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Tape and Reel Information

7.3.5 Gate Driver Protective Circuits

The DRV816x are protected against GVDD undervoltage and overvoltage, bootstrap undervoltage, MOSFET VDS and Overtemperature (OTSD) events.

Table 7-7 Fault Action and Response
FAULT CONDITION CONFIGURATION REPORT GATE DRIVER GH GATE DRIVER GL RECOVERY
GVDD undervoltage
(GVDD_UV)		 VGVDD < VGVDD_UV - nFAULT S-PD(1) P-PD(2) VGVDD > VGVDD_UV
VDS overcurrent
(VDS_OCP)		 VDS > VDSLVL VDSLVL pin with R (LEVEL0 - LEVEL6) nFAULT S-PD (1) P-PD(2) Latched: INH(IN) = Low & INL(EN) = Low for > tCLKFLT
VDSLVL pin open (LEVEL7) None Active(3) Active(3) No action
Thermal shutdown
(OTSD)		 TJ > TOTSD - nFAULT S-PD (1) P-PD(2) TJ < TOTSD
Bootstrap undervoltage VBST-SH < VBST_UV - None S-PD(1) Active(3) VBST-SH > VBST_UV
(1) S-PD : Semi-active Pull Down
(2) P-PD : Passive Pull Down
(3) Active : Gate Drivers are active for PWM