SLYA090 September   2024 TMAG5233

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
    1. 1.1 Reed Switches
    2. 1.2 Hall-Effect Sensors
    3. 1.3 Tunneling Magneto Resistance (TMR) Sensors
  5. 2Design Considerations
    1. 2.1 Technology Complexity and Cost
    2. 2.2 Axis of Sensitivity
      1. 2.2.1 Hall-Effect Switches
      2. 2.2.2 TMR Switches
      3. 2.2.3 Reed Switches
    3. 2.3 Mechanical Constraints
    4. 2.4 Power Consumption
  6. 3Summary
  7. 4References

3 Summary

Advancements in sensing technologies are providing low-power devices that increase the overall system reliability. Hall-effect sensors such as TMAG5233 offer low-power magnetic detection at lower manufacturing costs than TMR and at comparable sensitivity thresholds.

Table 3-1 Technology Comparison
ParameterHall-effectTMRReed Switch
CostLowestHighHighest
Sensing DirectionVertical or in-plane (X,Y,Z)Typically in-plane (X,Y)Vertical or in-plane depending on construction
HandlingStandard PCB assemblyStandard PCB assemblyTypically require manual installation
Current ConsumptionAs low as 0.55μA<0.3μAZero Current
Typical Operating Threshold (BOP)As low as 1.8mTAs low as 0.3mT<5mT
Permanent Damage from strong fieldsNoneSome devices can be damaged with fields as low as 100mTUncommon

To further explore low-power and in-plane magnetic switch options, please consider Table 3-2.

Table 3-2 Related Devices
DeviceGradeSensitivity DirectionPackage OptionsAverage Current (μA)
TMAG5233CommercialIn-planeSOT23-3(DBV)

2.7μA (40Hz)

0.55μA (5Hz)

DRV5032CommercialVertical

SOT23-3(DBV)

TO-92(LPG)

X2SON(DMR)

5.7μA (80Hz)

1.6μA (20Hz)

0.69μA (5Hz)

TMAG5231CommercialVertical

SOT23-3(DBV)

X2SON (DMR)

16μA (216Hz)

2μA (20Hz)

1.3μA (10Hz)

TMAG5123 (Q1)Commercial (Automotive)In-planeSOT23-3 (DBV)3.5mA (10kHz)