SNOK010 November   2024 TPS7H6005-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results

During the SEB/SEGR characterization, the device was tested at room temperature of approximately 25°C. The device was tested under both the enabled and disabled mode. For the SEB-OFF mode the device was disabled using the EN-pin by forcing 0V while in PWM mode and by holding both inputs low during the IIM mode testing. During the SEB/SEGR testing with the device enabled or disabled, not a single input current event was observed.

The species used for the SEB testing was Xenon (129Xe at 25MeV/nucleon) at MSU or Silver (109Ag at 15MeV/nucleon) at TAMU. An angle of incidence of 0° was used to achieve an LETEFF = 50.5MeV×cm2/mg or 48MeV×cm2/mg respectively (for more details, see Ion LETEFF, Depth, and Range in Silicon). The kinetic energy in the vacuum for this ions is 3.225Gev or 1.634GeV respectively. Flux of approximately 105 ions / cm2×s and a fluence of approximately 107 ions/cm2 per run was used. Run duration to achieve this fluence was approximately two minutes. The twelve devices (same as used in SEL testing) were powered up and exposed to the heavy-ions using the maximum recommended input voltage and boot voltage of 14V. The ASW (High-Side Driver Signal Return) was set to 14, 45 or 150 V depending on the variant being tested. The device was set in both PWM and IIM modes during testing. For more information, see Single-Event Effects section. No SEB/SEGR current events were observed during the twenty-six runs, indicating that the TPS7H60x5-SEP is SEB/SEGR-free up to LETEFF = 50.5 MeV×cm2/mg and across the full electrical specifications. Summary of TPS7H60x5-SEP SEB/SEGR Test Condition and Results shows the SEB/SEGR test conditions and results.

Table 7-2 Summary of TPS7H60x5-SEP SEB/SEGR Test Condition and Results
Run Number Unit NumberVariantIonLETEFF (MeV × cm2 / mg)Flux (ions × cm2/ mg)Fluence (number of ions)Enabled StatusVINVBOOTModeSwitching FrequencySEB Event?
151TPS7H6005129Xe

50.5

8.51 × 1041 × 107EN1414PWM500kHzNo
161TPS7H6005129Xe50.58.55 × 1041 × 107EN1414PWM1MHzNo
171TPS7H6005129Xe50.58.36 × 1041 × 107EN1414PWM2MHzNo
181TPS7H6005129Xe50.59.51 × 1041 × 107DIS1414PWMN/ANo
192TPS7H6005129Xe50.59.83 × 1041 × 107EN1414IIMENSW500kHzNo

20

2TPS7H6005129Xe50.58.5× 1041 × 107EN1414IIMENSTN/ANo

21

2TPS7H6005129Xe50.51.09 × 1051 × 107

EN

1414IIMENSTN/ANo

22

2TPS7H6005129Xe50.51.08 × 1051 × 107DIS1414IIMENSTN/ANo

23

3TPS7H6005129Xe50.51.07 × 1051 × 107EN1414IIMDISSW500kHzNo

24

3TPS7H6005129Xe50.51.14 × 1051 × 107EN1414IIMDISSTN/ANo

25

3

TPS7H6005129Xe50.51.11 × 1051 × 107EN1414IIMDISSTN/ANo

26

3

TPS7H6005129Xe50.51.09 × 1051 × 107

DIS

1414IIMDISSTN/ANo

27

4

TPS7H6015129Xe50.51.11 × 1051 × 107EN1414PWM500kHzNo

28

4

TPS7H6015129Xe50.51.14 × 1051 × 107DIS1414PWMN/ANo

29

5

TPS7H6015129Xe50.51.12 × 1051 × 107EN1414IIMENSW500kHzNo

30

6

TPS7H6015129Xe50.59.93 × 1041 × 107EN1414IIMDISSW500kHzNo

31

7

TPS7H6025129Xe50.51 × 1051 × 107EN1414PWM500kHzNo

32

7

TPS7H6025129Xe50.51.02 × 1051 × 107DIS1414PWMN/ANo

33

8

TPS7H6025129Xe50.51.1 × 1051 × 107EN1414IIMENSW500kHzNo

34

9

TPS7H6005109Ag

48

1.04 × 1051 × 107EN1414

PWM

500kHzNo

35

9

TPS7H6005109Ag

48

1.1 × 1051 × 107

DIS

14

14

PWM

N/A

No

36

10

TPS7H6015109Ag

48

1.05 × 1051 × 107

EN

14

14

PWM500kHz

No

37

10

TPS7H6015109Ag

48

1.08 × 1051 × 107

DIS

14

14

PWMN/A

No

38

11

TPS7H6025109Ag

48

1.05 × 1051 × 107

EN

14

14

PWM500kHz

No

39

11

TPS7H6025109Ag

48

1.06 × 1051 × 107

DIS

14

14

PWMN/A

No

40

12

TPS7H6025109Ag

48

1.07 × 1051 × 107

EN

14

14

IIMDISSW500kHz

No

Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations, the upper-bound cross-section (using a 95% confidence level) is calculated as:

Equation 2. σSEB≤ 1.42 x 10-8 cm2/device for LETEFF = 50.5 MeV·cm2/mg and T = 25°C
SEB On Run 15 (PWM Mode, fsw= 500kHz)Figure 7-6 SEB On Run 15 (PWM Mode, fsw= 500kHz)
SEB On Run 16 (PWM Mode, fsw = 1MHz)Figure 7-7 SEB On Run 16 (PWM Mode, fsw = 1MHz)
SEB On Run 17 (PWM Mode, fsw= 2MHz)Figure 7-8 SEB On Run 17 (PWM Mode, fsw= 2MHz)
SEB Off Run 18 (PWM Mode)Figure 7-9 SEB Off Run 18 (PWM Mode)
SEB On Run 20 (IIM-Enabled Mode, EN/HI = 14V)Figure 7-10 SEB On Run 20 (IIM-Enabled Mode, EN/HI = 14V)
SEB Off Run 22 (IIM-Enabled Mode)Figure 7-11 SEB Off Run 22 (IIM-Enabled Mode)
SEB On Run 24 (IIM-Disabled Mode, PWM/LI = 14V)Figure 7-12 SEB On Run 24 (IIM-Disabled Mode, PWM/LI = 14V)
SEB Off Run 26 (IIM-Disabled Mode)Figure 7-13 SEB Off Run 26 (IIM-Disabled Mode)