SNOSDE0A February   2022  – May 2022 LM74502-Q1 , LM74502H-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Input Voltage (VS)
      2. 9.3.2 Charge Pump (VCAP)
      3. 9.3.3 Gate Driver (GATE an SRC)
        1. 9.3.3.1 Inrush Current Control
      4. 9.3.4 Enable and Undervoltage Lockout (EN/UVLO)
      5. 9.3.5 Overvoltage Protection (OV)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
      2. 9.4.2 Conduction Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Design Considerations
        2. 10.2.2.2 MOSFET Selection
        3. 10.2.2.3 Overvoltage Protection
        4. 10.2.2.4 Charge Pump VCAP, Input and Output Capacitance
      3. 10.2.3 Selection of TVS Diodes for 12-V Battery Protection Applications
      4. 10.2.4 Selection of TVS Diodes and MOSFET for 24-V Battery Protection Applications
      5. 10.2.5 Application Curves
    3. 10.3 Surge Stopper Using LM74502-Q1, LM74502H-Q1
      1. 10.3.1 VS Capacitance, Resistor R1 and Zener Clamp (DZ)
      2. 10.3.2 Overvoltage Protection
      3. 10.3.3 MOSFET Selection
    4. 10.4 Fast Turn-On and Turn-Off High Side Switch Driver Using LM74502H-Q1
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Receiving Notification of Documentation Updates
    2. 13.2 Support Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

9.3.2 Charge Pump (VCAP)

The charge pump supplies the voltage necessary to drive the external N-channel MOSFET. An external charge pump capacitor is placed between VCAP and VS pin to provide energy to turn on the external MOSFET. For the charge pump to supply current to the external capacitor the EN/UVLO pin, voltage must be above the specified input high threshold, V(EN_IH). When enabled the charge pump sources a charging current of 300-µA typically. If EN/UVLO pins is pulled low, then the charge pump remains disabled. To ensure that the external MOSFET can be driven above its specified threshold voltage, the VCAP to VS voltage must be above the undervoltage lockout threshold, typically 6.5 V, before the internal gate driver is enabled. Use Equation 3 to calculate the initial gate driver enable delay.

Equation 1.

where

  • C(VCAP) is the charge pump capacitance connected across VS and VCAP pins
  • V(VCAP_UVLOR) = 6.5 V (typical)

To remove any chatter on the gate drive approximately 800 mV of hysteresis is added to the VCAP undervoltage lockout. The charge pump remains enabled until the VCAP to VS voltage reaches 12.4 V, typically, at which point the charge pump is disabled decreasing the current draw on the VS pin. The charge pump remains disabled until the VCAP to VS voltage is below to 11.6 V typically at which point the charge pump is enabled. The voltage between VCAP and VS continue to charge and discharge between 11.6 V and 12.4 V as shown in Figure 9-1. By enabling and disabling the charge pump, the operating quiescent current of the LM74502-Q1 is reduced. When the charge pump is disabled it sinks 5-µA typical.

Figure 9-1 Charge Pump Operation