SNVS891H September   2012  – September 2015 LM3642

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Amplifier Synchronization (TX/TORCH)
      2. 7.3.2 Input Voltage Flash Monitor (IVFM)
      3. 7.3.3 Fault and Protections
        1. 7.3.3.1 Fault Operation
        2. 7.3.3.2 Flash Time-Out
        3. 7.3.3.3 Overvoltage Protection (OVP)
        4. 7.3.3.4 Current Limit
        5. 7.3.3.5 Undervoltage Lockout (UVLO)
        6. 7.3.3.6 Thermal Shutdown (TSD)
        7. 7.3.3.7 LED and/or VOUT Fault
    4. 7.4 Device Functional Modes
      1. 7.4.1 Start-up (Enabling the Device)
      2. 7.4.2 Pass Mode
      3. 7.4.3 Flash Mode
      4. 7.4.4 Torch Mode
      5. 7.4.5 Indicator Mode
    5. 7.5 Programming
      1. 7.5.1 I2C-Compatible Interface
        1. 7.5.1.1 Data Validity
        2. 7.5.1.2 Start and Stop Conditions
        3. 7.5.1.3 Transferring Data
        4. 7.5.1.4 I2C-Compatible Chip Address
        5. 7.5.1.5 Transferring Data
    6. 7.6 Register Map
      1. 7.6.1 Register Descriptions
        1. 7.6.1.1 Enable Register (0x0A)
        2. 7.6.1.2 Flags Register (0x0B)
        3. 7.6.1.3 Flash Features Register (0x08)
        4. 7.6.1.4 Current Control Register (0x09)
        5. 7.6.1.5 Input Voltage Flash Monitor (IVFM) Mode Register (0x01)
        6. 7.6.1.6 Torch Ramp Time Register (0x06)
        7. 7.6.1.7 Silicon Revision Register
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Output Capacitor Selection
        2. 8.2.2.2 Input Capacitor Selection
        3. 8.2.2.3 Inductor Selection
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Trademarks
    4. 11.4 Community Resources
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

11 Device and Documentation Support

11.1 Device Support

11.1.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

11.2 Documentation Support

11.2.1 Related Documentation

For related documentation, see the following:

Texas Instruments Application Note 1112: DSBGA Wafer Level Chip Scale Package (SNVA009).

11.3 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.4 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.5 Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

11.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.