SNVSB06D July   2018  – May 2020 LM5180

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application
      2.      Typical Efficiency, VOUT = 5 V
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Integrated Power MOSFET
      2. 8.3.2  PSR Flyback Modes of Operation
      3. 8.3.3  Setting the Output Voltage
        1. 8.3.3.1 Diode Thermal Compensation
      4. 8.3.4  Control Loop Error Amplifier
      5. 8.3.5  Precision Enable
      6. 8.3.6  Configurable Soft Start
      7. 8.3.7  External Bias Supply
      8. 8.3.8  Minimum On-Time and Off-Time
      9. 8.3.9  Overcurrent Protection
      10. 8.3.10 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Standby Mode
      3. 8.4.3 Active Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Design 1: Wide VIN, Low IQ PSR Flyback Converter Rated at 5 V, 1 A
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1  Custom Design With WEBENCH® Tools
          2. 9.2.1.2.2  Custom Design With Excel Quickstart Tool
          3. 9.2.1.2.3  Flyback Transformer – T1
          4. 9.2.1.2.4  Flyback Diode – DFLY
          5. 9.2.1.2.5  Zener Clamp Circuit – DF, DCLAMP
          6. 9.2.1.2.6  Output Capacitor – COUT
          7. 9.2.1.2.7  Input Capacitor – CIN
          8. 9.2.1.2.8  Feedback Resistor – RFB
          9. 9.2.1.2.9  Thermal Compensation Resistor – RTC
          10. 9.2.1.2.10 UVLO Resistors – RUV1, RUV2
          11. 9.2.1.2.11 Soft-Start Capacitor – CSS
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Design 2: PSR Flyback Converter With Dual Outputs of 15 V and –7.7 V at 200 mA
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Flyback Transformer – T1
          2. 9.2.2.2.2 Flyback Diodes – DFLY1 and DFLY2
          3. 9.2.2.2.3 Input Capacitor – CIN
          4. 9.2.2.2.4 Feedback Resistor – RFB
          5. 9.2.2.2.5 UVLO Resistors – RUV1, RUV2
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Design 3: PSR Flyback Converter With Stacked Dual Outputs of 24 V and 5 V
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
          1. 9.2.3.2.1 Flyback Transformer – T1
          2. 9.2.3.2.2 Feedback Resistor – RFB
          3. 9.2.3.2.3 UVLO Resistors – RUV1, RUV2
        3. 9.2.3.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
      2. 12.1.2 Development Support
      3. 12.1.3 Custom Design With WEBENCH® Tools
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

8.3.8 Minimum On-Time and Off-Time

When the internal power MOSFET is turned off, the leakage inductance of the transformer resonates with the SW node parasitic capacitance. The resultant ringing behavior can be excessive with large transformer leakage inductance and may corrupt the secondary zero-current detection. In order to prevent such a situation, a minimum switch off-time, designated as tOFF-MIN, of maximum 450 ns is set internally to ensure proper functionality. This sets a lower limit for the transformer magnetizing inductance as discussed in the Detailed Design Procedure.

Furthermore, noise effects as a result of power MOSFET turn-on can impact the internal current sense circuit measurement. To mitigate this effect, the LM5180 provides a blanking time after the MOSFET turns on. This blanking time forces a minimum on-time, tON-MIN, of 140 ns.