SNVSC22B October   2023  – June 2024 LM51772

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Handling Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Buck-Boost Control Scheme
        1. 7.3.1.1 Buck Mode
        2. 7.3.1.2 Boost Mode
        3. 7.3.1.3 Buck-Boost Mode
      2. 7.3.2  Power Save Mode
      3. 7.3.3  Programmable Conduction Mode PCM
      4. 7.3.4  Reference System
        1. 7.3.4.1 VIO LDO and nRST-PIN
      5. 7.3.5  Supply Voltage Selection – VSMART Switch and Selection Logic
      6. 7.3.6  Enable and Undervoltage Lockout
        1. 7.3.6.1 UVLO
        2. 7.3.6.2 VDET Comparator
      7. 7.3.7  Internal VCC Regulators
        1. 7.3.7.1 VCC1 Regulator
        2. 7.3.7.2 VCC2 Regulator
      8. 7.3.8  Error Amplifier and Control
        1. 7.3.8.1 Output Voltage Regulation
        2. 7.3.8.2 Output Voltage Feedback
        3. 7.3.8.3 Voltage Regulation Loop
        4. 7.3.8.4 Dynamic Voltage Scaling
      9. 7.3.9  Output Voltage Discharge
      10. 7.3.10 Peak Current Sensor
      11. 7.3.11 Short Circuit - Hiccup Protection
      12. 7.3.12 Current Monitor/Limiter
        1. 7.3.12.1 Overview
        2. 7.3.12.2 Output Current Limitation
        3. 7.3.12.3 Output Current Monitor
      13. 7.3.13 Oscillator Frequency Selection
      14. 7.3.14 Frequency Synchronization
      15. 7.3.15 Output Voltage Tracking
        1. 7.3.15.1 Analog Voltage Tracking
        2. 7.3.15.2 Digital Voltage Tracking
      16. 7.3.16 Slope Compensation
      17. 7.3.17 Configurable Soft Start
      18. 7.3.18 Drive Pin
      19. 7.3.19 Dual Random Spread Spectrum – DRSS
      20. 7.3.20 Gate Driver
      21. 7.3.21 Cable Drop Compensation (CDC)
      22. 7.3.22 CFG-pin and R2D Interface
      23. 7.3.23 Advanced Monitoring Features
        1. 7.3.23.1  Overview
        2. 7.3.23.2  BUSY
        3. 7.3.23.3  OFF
        4. 7.3.23.4  VOUT
        5. 7.3.23.5  IOUT
        6. 7.3.23.6  INPUT
        7. 7.3.23.7  TEMPERATURE
        8. 7.3.23.8  CML
        9. 7.3.23.9  OTHER
        10. 7.3.23.10 ILIM_OP
        11. 7.3.23.11 nFLT/nINT Pin Output
        12. 7.3.23.12 Status Byte
      24. 7.3.24 Protection Features
        1. 7.3.24.1  Thermal Shutdown (TSD)
        2. 7.3.24.2  Over Current Protection
        3. 7.3.24.3  Output Over Voltage Protection 1 (OVP1)
        4. 7.3.24.4  Output Over Voltage Protection 2 (OVP2)
        5. 7.3.24.5  Input Voltage Protection (IVP)
        6. 7.3.24.6  Input Voltage Regulation (IVR)
        7. 7.3.24.7  Power Good
        8. 7.3.24.8  Boot-Strap Under Voltage Protection
        9. 7.3.24.9  Boot-strap Over Voltage Clamp
        10. 7.3.24.10 CRC - CHECK
    4. 7.4 Device Functional Modes
      1. 7.4.1 Overview
      2. 7.4.2 Logic State Description
    5. 7.5 Programming
      1. 7.5.1 I2C Bus Operation
      2. 7.5.2 Clock Stretching
      3. 7.5.3 Data Transfer Formats
      4. 7.5.4 Single READ from a Defined Register Address
      5. 7.5.5 Sequential READ Starting from a Defined Register Address
      6. 7.5.6 Single WRITE to a Defined Register Address
      7. 7.5.7 Sequential WRITE Starting at a Defined Register Address
  9. 8 LM51772 Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Custom Design with WEBENCH Tools
        2. 9.2.2.2  Frequency
        3. 9.2.2.3  Feedback Divider
        4. 9.2.2.4  Inductor and Current Sense Resistor Selection
        5. 9.2.2.5  Output Capacitor
        6. 9.2.2.6  Input Capacitor
        7. 9.2.2.7  Slope Compensation
        8. 9.2.2.8  UVLO Divider
        9. 9.2.2.9  Soft-Start Capacitor
        10. 9.2.2.10 MOSFETs QH1 and QL1
        11. 9.2.2.11 MOSFETs QH2 and QL2
        12. 9.2.2.12 Loop Compensation
        13. 9.2.2.13 External Component Selection
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 Power Stage Layout
        2. 9.4.1.2 Gate Driver Layout
        3. 9.4.1.3 Controller Layout
      2. 9.4.2 Layout Example
    5. 9.5 USB-PD Source with Power Path
    6. 9.6 Parallel (Multiphase) Operation
    7. 9.7 Constant Current LED Driver
    8. 9.8 Wireless Charging Supply
    9. 9.9 Bi-Directional Power Backup
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

9.4.1.2 Gate Driver Layout

The LM51772 high-side and low-side gate drivers incorporate short propagation delays, frequency depended dead-time control, and low-impedance output stages capable of delivering large peak currents with very fast rise and fall times to facilitate rapid turn-on and turn-off transitions of the external power MOSFETs. Very high di/dt can cause unacceptable ringing if the trace lengths are not well controlled. Minimization of stray or parasitic gate loop inductance is key to optimizing gate drive switching performance, whether it be series gate inductance that resonates with MOSFET gate capacitance or common source inductance (common to gate and power loops) that provides a negative feedback component opposing the gate drive command, and thereby increasing MOSFET switching times.

Connections from the gate driver outputs, HO1 and HO2, to the respective gates of the high-side MOSFETs must be as short as possible to reduce series parasitic inductance. Route HO1 and HO2 and SW1 and SW2 gate traces as a differential pair from the device pin to the high-side MOSFET, taking advantage of flux cancellation by reducing the loop area.

Connections from gate driver outputs, LO1 and LO2, to the respective gates of the low-side MOSFETs must be as short as possible to reduce series parasitic inductance. Route LO1 and LO2, and PGND traces as a differential pair from the device pin to the low-side MOSFET, taking advantage of flux cancellation by reducing the loop area.

Minimize the current loop path from the VCC, HB1, and HB2 pins through their respective capacitors as these provide the high instantaneous current.