SNVSC36A December   2021  – September 2024 LP5866

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7.     14
    8. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Time-Multiplexing Matrix
      2. 7.3.2 Analog Dimming (Current Gain Control)
      3. 7.3.3 PWM Dimming
      4. 7.3.4 ON and OFF Control
      5. 7.3.5 Data Refresh Mode
      6. 7.3.6 Full Addressable SRAM
      7. 7.3.7 Protections and Diagnostics
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
    6. 7.6 Register Maps
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Application
      2. 8.2.2 Design Requirements
      3. 8.2.3 Detailed Design Procedure
        1. 8.2.3.1 Program Procedure
      4. 8.2.4 Application Performance Plots
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Power Supply Recommendations
      2. 8.3.2 Power Supply Recommendations
      3. 8.3.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

9.4 Electrostatic Discharge Caution

LP5866 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.