Note: This section contains
various information from J7 devices and board designs. The specific details only apply to J7
board designs, but are provided here as an examples for AM62x board designs. Consult the AM62x datasheet for device
specifications.
The board level extraction guidelines listed
below are intended to work in any EDA extraction
tool and are not tool-specific. It is important to
follow the steps outlined in Section 4.2 through Section 4.4 immediately after completing touchstone model
extractions. The design should be checked with
these steps prior to running IBIS simulations.
- For DDR extractions, extract
power (VDDS_DDR/VDDQ) and signal nets together in
a 3D-EM solver.
- Use wide-band models. It is
recommended to extract from DC to at least until
6x the Nyquist frequency (for example, for
LPDDR4-3733 extract the model at least until 11.2
GHz).
- Check the board stack-up for
accurate layer thickness and material properties.
- It is recommended to use
Djordjevic-Sarkar models for the dielectric
material definition.
- Use accurate etch profiles
and surface roughness for the signal traces across
all layers in the stack-up.
- If the board layout is cut
prior to extraction (to reduce simulation time),
define a cut boundary that is at least 0.25 inch
away from the signal and power nets.
- Check the via padstack
definitions.
- Ensure that the
non-functional internal layer pads on signal vias
are modeled the same way they would be
fabricated.
- These non-functional internal
layer pads on signal vias are not recommended by
TI.
- Use Spice/S-parameter models
(typically available from the vendor) for modeling
all passives in the system.